Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
Page 1520/2164
Image
Part Number
Description
In Stock
Quantity
IXFX60N25Q
IXFX60N25Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH PLUS247

  • Manufacturer: IXYS
  • Series: *
  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
In Stock8,820
IXFX60N55Q2

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 550V 60A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 550V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 88mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 735W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock2,466
IXFX62N25
IXFX62N25

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 62A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 390W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock3,744
IXFX64N50P
IXFX64N50P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 64A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™, PolarHT™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 830W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock2,664
IXFX64N50Q3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 64A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 6950pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1000W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock5,544
IXFX64N60P
IXFX64N60P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 64A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™, PolarHT™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1040W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock7,146
IXFX64N60P3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 64A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™, Polar3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 145nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1130W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock8,208
IXFX64N60Q3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 64A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 95mOhm @ 32A, 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 9930pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock7,434
IXFX66N50Q2

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 66A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 9125pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 735W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock3,472
IXFX66N85X
IXFX66N85X

IXYS

Transistors - FETs, MOSFETs - Single

850V/66A ULTRA JUNCTION X-CLASS

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 850V
  • Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock5,634
IXFX73N30Q
IXFX73N30Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 300V 73A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock3,580
IXFX74N50P2

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 74A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™, PolarHV™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 77mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1400W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock2,160
IXFX78N50P3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 78A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™, Polar3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 147nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1130W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock2,880
IXFX80N15Q
IXFX80N15Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH PLUS247

  • Manufacturer: IXYS
  • Series: *
  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
In Stock6,588
IXFX80N50P
IXFX80N50P

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 80A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™, PolarHT™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 12700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1040W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock6,678
IXFX80N50Q3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 80A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 65mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock6,138
IXFX80N60P3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 80A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™, Polar3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock5,508
IXFX88N20Q
IXFX88N20Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 88A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 146nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock5,292
IXFX90N20Q
IXFX90N20Q

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 200V 90A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock2,700
IXFX90N30
IXFX90N30

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 300V 90A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 560W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock8,190
IXFX90N60X
IXFX90N60X

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 90A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1100W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock7,092
IXFX94N50P2

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 94A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™, PolarHV™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock8,982
IXFX98N50P3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 98A PLUS247

  • Manufacturer: IXYS
  • Series: HiPerFET™, Polar3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 1300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3
In Stock7,488
IXFY26N30X3

Transistors - FETs, MOSFETs - Single

300V/26A ULTRA JUNCTION X3-CLASS

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 66mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1.465nF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock15,096
IXFY30N25X3

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 30A TO252AA

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock15,252
IXFY36N20X3

Transistors - FETs, MOSFETs - Single

200V/36A ULTRA JUNCTION X3-CLASS

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1425pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 176W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock9,444
IXFY4N60P3
IXFY4N60P3

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 600V 4A TO-252

  • Manufacturer: IXYS
  • Series: HiPerFET™, Polar3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.2Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 365pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock7,884
IXFY4N85X
IXFY4N85X

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 850V 3.5A TO252

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 850V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 247pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (IXFY)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock2,934
IXFY5N50P3
IXFY5N50P3

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 500V 5A TO-252

  • Manufacturer: IXYS
  • Series: HiPerFET™, Polar3™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.65Ohm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock8,694
IXFY8N65X2
IXFY8N65X2

IXYS

Transistors - FETs, MOSFETs - Single

MOSFET N-CH

  • Manufacturer: IXYS
  • Series: HiPerFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 450mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
In Stock6,894