Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
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Transistors - Special Purpose (162)

Records 64,903

Page 1518/2164

Part Number	Description	In Stock
IXFX180N25T IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 180A PLUS247 Manufacturer: IXYS Series: GigaMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12.9mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 345nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V FET Feature: - Power Dissipation (Max): 1390W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock3,330
IXFX200N10P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 200A PLUS247 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V FET Feature: - Power Dissipation (Max): 830W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock2,034
IXFX20N120 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 20A ISOPLUS247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7400pF @ 25V FET Feature: - Power Dissipation (Max): 780W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock6,264
IXFX20N120P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 20A PLUS247 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V FET Feature: - Power Dissipation (Max): 780W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock5,004
IXFX20N80Q IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 20A PLUS247-3 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V FET Feature: - Power Dissipation (Max): 360W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock3,454
IXFX210N17T IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 170V 210A PLUS247 Manufacturer: IXYS Series: GigaMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 170V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 285nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 18800pF @ 25V FET Feature: - Power Dissipation (Max): 1150W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock5,022
IXFX210N30X3 IXYS	Transistors - FETs, MOSFETs - Single 300V/210A ULTRA JUNCTION X3-CLAS Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 24.2nF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock3,490
IXFX21N100F IXYS-RF	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 21A PLUS247-3 Manufacturer: IXYS-RF Series: HiPerRF™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V FET Feature: - Power Dissipation (Max): 500W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock7,344
IXFX21N100Q IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 21A PLUS 247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id: 5.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V FET Feature: - Power Dissipation (Max): 500W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock7,650
IXFX220N17T2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 170V 220A PLUS247 Manufacturer: IXYS Series: GigaMOS™, HiPerFET™, TrenchT2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 170V Current - Continuous Drain (Id) @ 25°C: 220A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.3mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 500nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock4,338
IXFX230N20T IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 230A PLUS247 Manufacturer: IXYS Series: GigaMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 230A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 378nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V FET Feature: - Power Dissipation (Max): 1670W (Tc) Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock18,504
IXFX240N15T2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 240A PLUS247 Manufacturer: IXYS Series: GigaMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 32000pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock7,650
IXFX240N25X3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 240A PLUS247-3 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 120A, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 345nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 23800pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock13,074
IXFX24N100 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 24A PLUS 247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 267nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V FET Feature: - Power Dissipation (Max): 560W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock7,740
IXFX24N100F IXYS-RF	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 24A PLUS247-3 Manufacturer: IXYS-RF Series: HiPerRF™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V FET Feature: - Power Dissipation (Max): 560W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock6,894
IXFX24N100Q3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 24A PLUS247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 440mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 6.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V FET Feature: - Power Dissipation (Max): 1000W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock4,374
IXFX24N90Q IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 24A PLUS 247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V FET Feature: - Power Dissipation (Max): 500W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock5,634
IXFX250N10P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 250A PLUS247 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 205nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock8,154
IXFX25N90 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 25A PLUS247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V FET Feature: - Power Dissipation (Max): 560W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock3,526
IXFX260N17T IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 170V 260A PLUS247 Manufacturer: IXYS Series: GigaMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 170V Current - Continuous Drain (Id) @ 25°C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 6.5mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V FET Feature: - Power Dissipation (Max): 1670W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock6,444
IXFX26N100P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 26A PLUS247 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 11900pF @ 25V FET Feature: - Power Dissipation (Max): 780W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock3,472
IXFX26N120P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 26A PLUS247 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 25V FET Feature: - Power Dissipation (Max): 960W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock3,726
IXFX26N60Q IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 26A PLUS 247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V FET Feature: - Power Dissipation (Max): 360W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock3,654
IXFX26N90 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 26A PLUS 247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300mOhm @ 13A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10800pF @ 25V FET Feature: - Power Dissipation (Max): 560W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock2,088
IXFX27N80Q IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 27A PLUS 247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V FET Feature: - Power Dissipation (Max): 500W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock2,124
IXFX300N20X3 IXYS	Transistors - FETs, MOSFETs - Single 200V/300A ULTRA JUNCTION X3-CLAS Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 23800pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock2,880
IXFX30N100Q2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 30A PLUS247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 8200pF @ 25V FET Feature: - Power Dissipation (Max): 735W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock6,138
IXFX30N110P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1100V 30A PLUS247 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1100V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 25V FET Feature: - Power Dissipation (Max): 960W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock8,190
IXFX30N50 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH PLUS247 Manufacturer: IXYS Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,740
IXFX30N50Q IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 30A PLUS247 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 160mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 25V FET Feature: - Power Dissipation (Max): 416W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PLUS247™-3 Package / Case: TO-247-3	In Stock3,978

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