IXFX66N85X
For Reference Only
Part Number | IXFX66N85X |
PNEDA Part # | IXFX66N85X |
Description | 850V/66A ULTRA JUNCTION X-CLASS |
Manufacturer | IXYS |
Unit Price | Request a Quote |
In Stock | 5,634 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
IXFX66N85X Resources
Brand | IXYS |
ECAD Module | |
Mfr. Part Number | IXFX66N85X |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IXFX66N85X Datasheet
- where to find IXFX66N85X
- IXYS
- IXYS IXFX66N85X
- IXFX66N85X PDF Datasheet
- IXFX66N85X Stock
- IXFX66N85X Pinout
- Datasheet IXFX66N85X
- IXFX66N85X Supplier
- IXYS Distributor
- IXFX66N85X Price
- IXFX66N85X Distributor
IXFX66N85X Specifications
Manufacturer | IXYS |
Series | HiPerFET™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 850V |
Current - Continuous Drain (Id) @ 25°C | 66A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 65mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 5.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 230nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 8900pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1250W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PLUS247™-3 |
Package / Case | TO-247-3 |
The Products You May Be Interested In
ON Semiconductor Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.8Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 705pF @ 25V FET Feature - Power Dissipation (Max) 107W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Infineon Technologies Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 155A (Tc) Drive Voltage (Max Rds On, Min Rds On) 8V, 10V Rds On (Max) @ Id, Vgs 5.9mOhm @ 150A, 10V Vgs(th) (Max) @ Id 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 75V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-HSOF-8-1 Package / Case 8-PowerSFN |
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series U-MOSIV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 42mOhm @ 9A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Taiwan Semiconductor Corporation Manufacturer Taiwan Semiconductor Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 480pF @ 100V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251 (IPAK) Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
IXYS Manufacturer IXYS Series PolarP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 18A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |