IXFX26N90
For Reference Only
Part Number | IXFX26N90 |
PNEDA Part # | IXFX26N90 |
Description | MOSFET N-CH 900V 26A PLUS 247 |
Manufacturer | IXYS |
Unit Price | Request a Quote |
In Stock | 2,088 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Nov 20 - Nov 25 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
IXFX26N90 Resources
Brand | IXYS |
ECAD Module | |
Mfr. Part Number | IXFX26N90 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IXFX26N90 Datasheet
- where to find IXFX26N90
- IXYS
- IXYS IXFX26N90
- IXFX26N90 PDF Datasheet
- IXFX26N90 Stock
- IXFX26N90 Pinout
- Datasheet IXFX26N90
- IXFX26N90 Supplier
- IXYS Distributor
- IXFX26N90 Price
- IXFX26N90 Distributor
IXFX26N90 Specifications
Manufacturer | IXYS |
Series | HiPerFET™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 300mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id | 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 10800pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 560W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PLUS247™-3 |
Package / Case | TO-247-3 |
The Products You May Be Interested In
Toshiba Semiconductor and Storage Manufacturer Toshiba Semiconductor and Storage Series DTMOSIV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 88mOhm @ 15.4A, 10V Vgs(th) (Max) @ Id 3.7V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 300V FET Feature Super Junction Power Dissipation (Max) 230W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 Package / Case TO-247-3 |
Vishay Siliconix Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 90mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.9W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 10V Rds On (Max) @ Id, Vgs 35mOhm @ 6A, 10V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 281pF @ 10V FET Feature - Power Dissipation (Max) 1.13W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 Package / Case TO-236-3, SC-59, SOT-23-3 |
Infineon Technologies Manufacturer Infineon Technologies Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 900mA (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12Ohm @ 450mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 215pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 28W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |