Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 1500/2164

Part Number	Description	In Stock
IXFK94N50P2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 94A TO264 Manufacturer: IXYS Series: HiPerFET™, PolarHV™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V FET Feature: - Power Dissipation (Max): 1300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	In Stock6,480
IXFK98N50P3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 98A TO264 Manufacturer: IXYS Series: HiPerFET™, Polar3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 197nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 13100pF @ 25V FET Feature: - Power Dissipation (Max): 1300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264AA (IXFK) Package / Case: TO-264-3, TO-264AA	In Stock8,406
IXFL100N50P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 70A ISOPLUS264 Manufacturer: IXYS Series: HiPerFET™, PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 52mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V FET Feature: - Power Dissipation (Max): 625W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock6,444
IXFL132N50P3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 63A ISOPLUS264 Manufacturer: IXYS Series: HiPerFET™, Polar3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 43mOhm @ 66A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 18600pF @ 25V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock6,084
IXFL210N30P3 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 300V 108A TO-264 Manufacturer: IXYS Series: HiPerFET™, Polar3™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 105A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 268nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 16200pF @ 25V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock5,040
IXFL30N120P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 18A I5-PAK Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V FET Feature: - Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUSi5-Pak™ Package / Case: ISOPLUSi5-Pak™	In Stock3,600
IXFL32N120P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 24A I5-PAK Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 340mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 21000pF @ 25V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUSi5-Pak™ Package / Case: ISOPLUSi5-Pak™	In Stock3,870
IXFL34N100 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 30A ISOPLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9200pF @ 25V FET Feature: - Power Dissipation (Max): 550W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock4,014
IXFL38N100P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 29A I5-PAK Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 230mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUSi5-Pak™ Package / Case: ISOPLUSi5-Pak™	In Stock6,120
IXFL38N100Q2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 29A ISOPLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 19A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V FET Feature: - Power Dissipation (Max): 380W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock15,072
IXFL39N90 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 34A ISOPLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 19.5A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 375nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13400pF @ 25V FET Feature: - Power Dissipation (Max): 580W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock5,904
IXFL40N110P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1100V 21A ISOPLUS264 Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1100V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 310nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock6,678
IXFL44N100P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 22A I5-PAK Manufacturer: IXYS Series: HiPerFET™, PolarP2™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 240mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 6.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 19000pF @ 25V FET Feature: - Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock6,102
IXFL44N60 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 41A ISOPLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8900pF @ 25V FET Feature: - Power Dissipation (Max): 500W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock2,610
IXFL44N80 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 44A ISOPLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 165mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V FET Feature: - Power Dissipation (Max): 550W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock5,994
IXFL55N50 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 55A TO-264AA Manufacturer: IXYS Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock3,834
IXFL60N60 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 60A ISOPLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V FET Feature: - Power Dissipation (Max): 700W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock2,070
IXFL60N80P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 40A ISOPLUS264 Manufacturer: IXYS Series: HiPerFET™, PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V FET Feature: - Power Dissipation (Max): 625W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock4,842
IXFL70N60Q2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 37A ISOPLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 92mOhm @ 35A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V FET Feature: - Power Dissipation (Max): 360W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock5,994
IXFL80N50Q2 IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 64A ISOPLUS264 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 66mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V FET Feature: - Power Dissipation (Max): 625W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock8,964
IXFL82N60P IXYS	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 55A ISOPLUS 264 Manufacturer: IXYS Series: HiPerFET™, PolarHT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 78mOhm @ 41A, 10V Vgs(th) (Max) @ Id: 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 25V FET Feature: - Power Dissipation (Max): 625W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS264™ Package / Case: ISOPLUS264™	In Stock4,428
IXFM10N90 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3	In Stock5,994
IXFM11N80 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AA Package / Case: TO-204AA, TO-3	In Stock2,772
IXFM15N60 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AE Package / Case: TO-204AE	In Stock7,272
IXFM1627 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,178
IXFM1633 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,376
IXFM1766 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock8,658
IXFM35N30 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AE Package / Case: TO-204AE	In Stock3,528
IXFM42N20 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 21A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AE Package / Case: TO-204AE	In Stock6,246
IXFM67N10 IXYS	Transistors - FETs, MOSFETs - Single POWER MOSFET TO-3 Manufacturer: IXYS Series: HiPerFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 33.5A, 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V FET Feature: - Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-204AE Package / Case: TO-204AE	In Stock6,750

«
‹
1
...
1497
1498
1499
1500 (current)
1501
1502
1503
...
2164
›
»

Send Message

Certifications

Transistors

Resources

Support

Social Media

Need Help?
Send Message