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IXFL38N100P

IXFL38N100P

For Reference Only

Part Number IXFL38N100P
PNEDA Part # IXFL38N100P
Description MOSFET N-CH 1000V 29A I5-PAK
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,120
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFL38N100P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFL38N100P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFL38N100P, IXFL38N100P Datasheet (Total Pages: 5, Size: 127.91 KB)
PDFIXFL38N100P Datasheet Cover
IXFL38N100P Datasheet Page 2 IXFL38N100P Datasheet Page 3 IXFL38N100P Datasheet Page 4 IXFL38N100P Datasheet Page 5

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IXFL38N100P Specifications

ManufacturerIXYS
SeriesHiPerFET™, PolarP2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs230mOhm @ 19A, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs350nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds24000pF @ 25V
FET Feature-
Power Dissipation (Max)520W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUSi5-Pak™
Package / CaseISOPLUSi5-Pak™

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