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IXFL38N100Q2

IXFL38N100Q2

For Reference Only

Part Number IXFL38N100Q2
PNEDA Part # IXFL38N100Q2
Description MOSFET N-CH 1000V 29A ISOPLUS264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 15,072
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFL38N100Q2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFL38N100Q2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFL38N100Q2, IXFL38N100Q2 Datasheet (Total Pages: 4, Size: 135.25 KB)
PDFIXFL38N100Q2 Datasheet Cover
IXFL38N100Q2 Datasheet Page 2 IXFL38N100Q2 Datasheet Page 3 IXFL38N100Q2 Datasheet Page 4

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IXFL38N100Q2 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 19A, 10V
Vgs(th) (Max) @ Id5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs250nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13500pF @ 25V
FET Feature-
Power Dissipation (Max)380W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISOPLUS264™
Package / CaseISOPLUS264™

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