Transistors

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Records 64,903

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Part Number	Description	In Stock
IPW65R041CFDFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 650V 68.5A PG-TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 68.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41mOhm @ 33.1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 100V FET Feature: - Power Dissipation (Max): 500W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock12,330
IPW65R041CFDFKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_LEGACY Manufacturer: Infineon Technologies Series: CoolMOS™ CFD2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 68.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 41mOhm @ 33.1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 3.3mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 100V FET Feature: - Power Dissipation (Max): 500W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock3,798
IPW65R045C7300XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V TO-247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V Vgs(th) (Max) @ Id: 4V @ 1.25mA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4.34nF @ 400V FET Feature: - Power Dissipation (Max): 227W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247 Package / Case: TO-247-3	In Stock3,420
IPW65R045C7FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 46A TO-247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V Vgs(th) (Max) @ Id: 4V @ 1.25mA Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4340pF @ 400V FET Feature: - Power Dissipation (Max): 227W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock16,596
IPW65R048CFDAFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V TO-247-3 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 63.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 29.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 2.9mA Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7440pF @ 100V FET Feature: - Power Dissipation (Max): 500W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock8,262
IPW65R065C7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V TO-247-3 Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V Vgs(th) (Max) @ Id: 4V @ 850µA Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 400V FET Feature: - Power Dissipation (Max): 171W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock7,968
IPW65R070C6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 53.5A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 53.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 17.6A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.76mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 100V FET Feature: - Power Dissipation (Max): 391W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock10,152
IPW65R080CFDAFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V 43.3A TO247 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.76mA Gate Charge (Qg) (Max) @ Vgs: 161nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 4440pF @ 100V FET Feature: - Power Dissipation (Max): 391W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock23,184
IPW65R080CFDFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V 43.3A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.76mA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5030pF @ 100V FET Feature: - Power Dissipation (Max): 391W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock13,608
IPW65R080CFDFKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_LEGACY Manufacturer: Infineon Technologies Series: CoolMOS™ CFD2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 43.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 80mOhm @ 17.6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.8mA Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5030pF @ 100V FET Feature: - Power Dissipation (Max): 391W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock4,176
IPW65R095C7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 24A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2140pF @ 400V FET Feature: - Power Dissipation (Max): 128W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247 Package / Case: TO-247-3	In Stock10,584
IPW65R099C6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 38A TO-247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 127nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 100V FET Feature: - Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock8,112
IPW65R110CFDAFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 31.2A TO247 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V FET Feature: - Power Dissipation (Max): 277.8W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock10,536
IPW65R110CFDFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 31.2A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V FET Feature: - Power Dissipation (Max): 277.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock11,028
IPW65R110CFDFKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_LEGACY Manufacturer: Infineon Technologies Series: CoolMOS™ CFD2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3240pF @ 100V FET Feature: - Power Dissipation (Max): 277.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	In Stock4,734
IPW65R125C7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V Vgs(th) (Max) @ Id: 4V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 400V FET Feature: - Power Dissipation (Max): 101W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock6,300
IPW65R150CFDAFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V TO247 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V FET Feature: - Power Dissipation (Max): 195.3W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock5,112
IPW65R150CFDFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V FET Feature: - Power Dissipation (Max): 195.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock7,632
IPW65R150CFDFKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_LEGACY Manufacturer: Infineon Technologies Series: CoolMOS™ CFD2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 900µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V FET Feature: - Power Dissipation (Max): 195.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	In Stock7,614
IPW65R190C6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 20.2A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V FET Feature: - Power Dissipation (Max): 151W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock6,354
IPW65R190C7XKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 20.2A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ C7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id: 4V @ 290µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 400V FET Feature: - Power Dissipation (Max): 72W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock3,132
IPW65R190CFDAFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 17.5A TO247 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V FET Feature: - Power Dissipation (Max): 151W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock6,408
IPW65R190CFDFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 17.5A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V FET Feature: - Power Dissipation (Max): 151W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock58,788
IPW65R190CFDFKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single HIGH POWER_LEGACY Manufacturer: Infineon Technologies Series: CoolMOS™ CFD2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id: 4.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V FET Feature: - Power Dissipation (Max): 151W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	In Stock3,924
IPW65R190E6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 20.2A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 730µA Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 100V FET Feature: - Power Dissipation (Max): 151W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock7,218
IPW65R280C6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 13.8A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V FET Feature: - Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock6,930
IPW65R280E6FKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 13.8A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 100V FET Feature: - Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock5,778
IPW65R310CFDFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 11.4A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 440µA Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V FET Feature: - Power Dissipation (Max): 104.2W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock6,264
IPW65R420CFDFKSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 8.7A TO247 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 340µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V FET Feature: - Power Dissipation (Max): 83.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	In Stock8,298
IPW65R420CFDFKSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single LOW POWER_LEGACY Manufacturer: Infineon Technologies Series: CoolMOS™ CFD2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs: 31.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 100V FET Feature: - Power Dissipation (Max): 83.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	In Stock8,964

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