Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPW65R280E6FKSA1

IPW65R280E6FKSA1

For Reference Only

Part Number IPW65R280E6FKSA1
PNEDA Part # IPW65R280E6FKSA1
Description MOSFET N-CH 650V 13.8A TO247
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,778
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPW65R280E6FKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPW65R280E6FKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPW65R280E6FKSA1 Datasheet
  • where to find IPW65R280E6FKSA1
  • Infineon Technologies

  • Infineon Technologies IPW65R280E6FKSA1
  • IPW65R280E6FKSA1 PDF Datasheet
  • IPW65R280E6FKSA1 Stock

  • IPW65R280E6FKSA1 Pinout
  • Datasheet IPW65R280E6FKSA1
  • IPW65R280E6FKSA1 Supplier

  • Infineon Technologies Distributor
  • IPW65R280E6FKSA1 Price
  • IPW65R280E6FKSA1 Distributor

IPW65R280E6FKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds950pF @ 100V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3

The Products You May Be Interested In

STSJ25NF3LL

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.5mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

33nC @ 4.5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1650pF @ 25V

FET Feature

-

Power Dissipation (Max)

70W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width) Exposed Pad

DMN3110LCP3-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 8V

Rds On (Max) @ Id, Vgs

69mOhm @ 500mA, 8V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.52nC @ 4.5V

Vgs (Max)

12V

Input Capacitance (Ciss) (Max) @ Vds

150pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.38W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

X2-DFN1006-3

Package / Case

3-XFDFN

TK20A25D,S5Q(M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

π-MOSVII

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

20A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2550pF @ 100V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220SIS

Package / Case

TO-220-3 Full Pack

CSD15571Q2

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

22A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.7nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

419pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-SON (2x2)

Package / Case

6-WDFN Exposed Pad

AO6404

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

8.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17.9nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1810pF @ 10V

FET Feature

-

Power Dissipation (Max)

2W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SC-74, SOT-457

Recently Sold

GD25Q80CSIG

GD25Q80CSIG

GigaDevice Semiconductor (HK) Limited

NOR FLASH

0ZCJ0025AF2E

0ZCJ0025AF2E

Bel Fuse

PTC RESET FUSE 24V 250MA 1206

MMSZ5250BT1G

MMSZ5250BT1G

ON Semiconductor

DIODE ZENER 20V 500MW SOD123

EP4CE40F23I7N

EP4CE40F23I7N

Intel

IC FPGA 328 I/O 484FBGA

RT9193-33GB

RT9193-33GB

Richtek USA Inc.

IC REG LINEAR 3.3V 300MA SOT23-5

AOZ1281DI

AOZ1281DI

Alpha & Omega Semiconductor

IC REG BUCK ADJUSTABLE 1.8A 8DFN

ATF-54143-TR1G

ATF-54143-TR1G

Broadcom

FET RF 5V 2GHZ SOT-343

LTM4616EV#PBF

LTM4616EV#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5V 0.6-5V

LTC4365ITS8#TRMPBF

LTC4365ITS8#TRMPBF

Linear Technology/Analog Devices

IC OVERVOLTAGE PROT TSOT23-8

MAX3160EAP+T

MAX3160EAP+T

Maxim Integrated

IC TRANSCEIVER FULL 2/2 20SSOP

IR2214SSTRPBF

IR2214SSTRPBF

Infineon Technologies

IC DVR HALF BRIDGE IC 24SSOP

XCF08PFSG48C

XCF08PFSG48C

Xilinx

IC PROM SRL 1.8V 8M GATE 48CSBGA