IPW65R048CFDAFKSA1

For Reference Only
Part Number | IPW65R048CFDAFKSA1 |
PNEDA Part # | IPW65R048CFDAFKSA1 |
Description | MOSFET N-CH 650V TO-247-3 |
Manufacturer | Infineon Technologies |
Unit Price | Request a Quote |
In Stock | 8,262 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | Apr 5 - Apr 10 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPW65R048CFDAFKSA1 Resources
Brand | Infineon Technologies |
ECAD Module |
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Mfr. Part Number | IPW65R048CFDAFKSA1 |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPW65R048CFDAFKSA1 Specifications
Manufacturer | Infineon Technologies |
Series | Automotive, AEC-Q101, CoolMOS™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 63.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 48mOhm @ 29.4A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 2.9mA |
Gate Charge (Qg) (Max) @ Vgs | 270nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7440pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 500W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
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