Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 1327/2164

Part Number	Description	In Stock
IPS70R900P7SAKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 700V 6A TO251 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 211pF @ 400V FET Feature: - Power Dissipation (Max): 30.5W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock13,890
IPS70R950CEAKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET NCH 700V 7.4A TO251 Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 68W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251 Package / Case: TO-251-3 Stub Leads, IPak	In Stock13,770
IPS80R1K2P7AKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 4.5A TO251-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1.7A, 10V Vgs(th) (Max) @ Id: 3.5V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 500V FET Feature: - Power Dissipation (Max): 37W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	In Stock13,320
IPS80R1K4P7AKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 4A IPAK-SL Manufacturer: Infineon Technologies Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 700µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: Super Junction Power Dissipation (Max): 32W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	In Stock7,650
IPS80R2K0P7AKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 3A TO251-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 940mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 50µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 500V FET Feature: - Power Dissipation (Max): 24W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	In Stock14,004
IPS80R2K4P7AKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 2.5A TO251-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 800mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 500V FET Feature: - Power Dissipation (Max): 22W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock13,332
IPS80R600P7AKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 8A TO251-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 170µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 500V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	In Stock15,120
IPS80R750P7AKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 7A TO251-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id: 3.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V FET Feature: - Power Dissipation (Max): 51W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock16,482
IPS80R900P7AKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V COOLMOS TO251-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id: 3.5V @ 110µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock3,780
IPSA70R1K2P7SAKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET COOLMOS 700V TO251-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 900mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 400V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 174pF @ 400V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock8,016
IPSA70R1K4CEAKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V 5.4A IPAK Manufacturer: Infineon Technologies Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V FET Feature: - Power Dissipation (Max): 53W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock4,950
IPSA70R1K4P7SAKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET COOLMOS 700V TO251-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 700mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 400V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 158pF @ 400V FET Feature: - Power Dissipation (Max): 22.7W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock14,940
IPSA70R2K0CEAKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 700V 4A IPAK Manufacturer: Infineon Technologies Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 163pF @ 100V FET Feature: - Power Dissipation (Max): 42W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock17,412
IPSA70R2K0P7SAKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET TO251-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 3A Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 3.5V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 400V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 400V FET Feature: - Power Dissipation (Max): 17.6W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3-347 Package / Case: TO-251-3 Stub Leads, IPak	In Stock9,936
IPSA70R360P7SAKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET COOLMOS 700V TO251-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 16.4nC @ 400V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 517pF @ 400V FET Feature: - Power Dissipation (Max): 59.5W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock16,458
IPSA70R450P7SAKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET COOLMOS 700V TO251-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V Vgs(th) (Max) @ Id: 3.5V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 13.1nC @ 400V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 424pF @ 400V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock16,836
IPSA70R600CEAKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V 10.5A IPAK Manufacturer: Infineon Technologies Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 210µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 474pF @ 100V FET Feature: - Power Dissipation (Max): 86W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock15,258
IPSA70R600P7SAKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET COOLMOS 700V TO251-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id: 3.5V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 400V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 364pF @ 400V FET Feature: - Power Dissipation (Max): 43.1W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock19,782
IPSA70R750P7SAKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET COOLMOS 700V TO251-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V Vgs(th) (Max) @ Id: 3.5V @ 70µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 400V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 306pF @ 400V FET Feature: - Power Dissipation (Max): 34.7W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock17,112
IPSA70R900P7SAKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET COOLMOS 700V TO251-3 Manufacturer: Infineon Technologies Series: CoolMOS™ P7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V Vgs(th) (Max) @ Id: 3.5V @ 60µA Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 400V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 211pF @ 400V FET Feature: - Power Dissipation (Max): 30.5W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock17,448
IPSA70R950CEAKMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V 8.7A TO251-3 Manufacturer: Infineon Technologies Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 328pF @ 100V FET Feature: - Power Dissipation (Max): 94W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3-347 Package / Case: TO-251-3 Stub Leads, IPak	In Stock12,414
IPSH4N03LA G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 90A IPAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.4mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 26nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3200pF @ 15V FET Feature: - Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	In Stock3,582
IPSH5N03LA G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 50A IPAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V FET Feature: - Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	In Stock3,348
IPSH6N03LA G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 50A IPAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 30µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 15V FET Feature: - Power Dissipation (Max): 71W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	In Stock5,364
IPSH6N03LB G Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 50A IPAK Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2V @ 40µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 15V FET Feature: - Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	In Stock8,046
IPT004N03LATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 300A 8HSOF Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.4mOhm @ 150A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 163nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 15V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	In Stock35,148
IPT007N06NATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 300A 8HSOF Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 0.75mOhm @ 150A, 10V Vgs(th) (Max) @ Id: 3.3V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 287nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 30V FET Feature: - Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	In Stock71,916
IPT012N06NATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 240A HSOF-8 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 3.3V @ 143µA Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 30V FET Feature: - Power Dissipation (Max): 214W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	In Stock4,788
IPT012N08N5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 300A 8HSOF Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.2mOhm @ 150A, 10V Vgs(th) (Max) @ Id: 3.8V @ 280µA Gate Charge (Qg) (Max) @ Vgs: 223nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 17000pF @ 40V FET Feature: - Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	In Stock29,388
IPT015N10N5ATMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 300A 8HSOF Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 211nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 16000pF @ 50V FET Feature: - Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-8-1 Package / Case: 8-PowerSFN	In Stock255,786

«
‹
1
...
1324
1325
1326
1327 (current)
1328
1329
1330
...
2164
›
»

Send Message

Certifications

Transistors

Resources

Support

Social Media

Need Help?
Send Message