Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPS80R750P7AKMA1

IPS80R750P7AKMA1

For Reference Only

Part Number IPS80R750P7AKMA1
PNEDA Part # IPS80R750P7AKMA1
Description MOSFET N-CH 800V 7A TO251-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 16,482
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPS80R750P7AKMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPS80R750P7AKMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPS80R750P7AKMA1, IPS80R750P7AKMA1 Datasheet (Total Pages: 13, Size: 937.73 KB)
PDFIPS80R750P7AKMA1 Datasheet Cover
IPS80R750P7AKMA1 Datasheet Page 2 IPS80R750P7AKMA1 Datasheet Page 3 IPS80R750P7AKMA1 Datasheet Page 4 IPS80R750P7AKMA1 Datasheet Page 5 IPS80R750P7AKMA1 Datasheet Page 6 IPS80R750P7AKMA1 Datasheet Page 7 IPS80R750P7AKMA1 Datasheet Page 8 IPS80R750P7AKMA1 Datasheet Page 9 IPS80R750P7AKMA1 Datasheet Page 10 IPS80R750P7AKMA1 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPS80R750P7AKMA1 Datasheet
  • where to find IPS80R750P7AKMA1
  • Infineon Technologies

  • Infineon Technologies IPS80R750P7AKMA1
  • IPS80R750P7AKMA1 PDF Datasheet
  • IPS80R750P7AKMA1 Stock

  • IPS80R750P7AKMA1 Pinout
  • Datasheet IPS80R750P7AKMA1
  • IPS80R750P7AKMA1 Supplier

  • Infineon Technologies Distributor
  • IPS80R750P7AKMA1 Price
  • IPS80R750P7AKMA1 Distributor

IPS80R750P7AKMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs750mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id3.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds460pF @ 500V
FET Feature-
Power Dissipation (Max)51W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

The Products You May Be Interested In

FDD3670

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

34A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

32mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2490pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 83W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IXFP8N85X

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

850V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

850mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

17nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

654pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB (IXFP)

Package / Case

TO-220-3

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

300mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 25V

FET Feature

-

Power Dissipation (Max)

380W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3

NTH4L040N65S3F

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

TPCF8B01(TE85L,F,M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

U-MOSIII

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

110mOhm @ 1.4A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 200µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

470pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

330mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

VS-8 (2.9x1.5)

Package / Case

8-SMD, Flat Lead

Recently Sold

BZT52C8V2S-7-F

BZT52C8V2S-7-F

Diodes Incorporated

DIODE ZENER 8.2V 200MW SOD323

ADM211ARSZ-REEL

ADM211ARSZ-REEL

Analog Devices

IC TRANSCEIVER FULL 4/5 28SSOP

PI3VDP411LSRZBE

PI3VDP411LSRZBE

Diodes Incorporated

IC DEMULTIPLEXER 48TQFN

DS1305EN

DS1305EN

Maxim Integrated

IC RTC CLK/CALENDAR SPI 20-TSSOP

CRA2512-FZ-R020ELF

CRA2512-FZ-R020ELF

Bourns

RES 0.02 OHM 1% 3W 2512

SMAJ5.0CA-13-F

SMAJ5.0CA-13-F

Diodes Incorporated

TVS DIODE 5V 9.2V SMA

ADM3202ARUZ

ADM3202ARUZ

Analog Devices

IC TRANSCEIVER FULL 2/2 16TSSOP

MF-R050

MF-R050

Bourns

PTC RESET FUSE 60V 500MA RADIAL

MMSS8050-H-TP

MMSS8050-H-TP

Micro Commercial Co

TRANS NPN 25V 1.5A SOT23

FDMF6708N

FDMF6708N

ON Semiconductor

MODULE DRMOS 50A 40PQFN

AD823AR

AD823AR

Analog Devices

IC OPAMP JFET 2 CIRCUIT 8SOIC

BYW80-200G

BYW80-200G

ON Semiconductor

DIODE GEN PURP 200V 8A TO220-2