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IPS80R2K4P7AKMA1

IPS80R2K4P7AKMA1

For Reference Only

Part Number IPS80R2K4P7AKMA1
PNEDA Part # IPS80R2K4P7AKMA1
Description MOSFET N-CH 800V 2.5A TO251-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 13,332
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPS80R2K4P7AKMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPS80R2K4P7AKMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPS80R2K4P7AKMA1, IPS80R2K4P7AKMA1 Datasheet (Total Pages: 13, Size: 950.74 KB)
PDFIPS80R2K4P7AKMA1 Datasheet Cover
IPS80R2K4P7AKMA1 Datasheet Page 2 IPS80R2K4P7AKMA1 Datasheet Page 3 IPS80R2K4P7AKMA1 Datasheet Page 4 IPS80R2K4P7AKMA1 Datasheet Page 5 IPS80R2K4P7AKMA1 Datasheet Page 6 IPS80R2K4P7AKMA1 Datasheet Page 7 IPS80R2K4P7AKMA1 Datasheet Page 8 IPS80R2K4P7AKMA1 Datasheet Page 9 IPS80R2K4P7AKMA1 Datasheet Page 10 IPS80R2K4P7AKMA1 Datasheet Page 11

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IPS80R2K4P7AKMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs7.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 500V
FET Feature-
Power Dissipation (Max)22W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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