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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
Description
In Stock
Quantity
BFU550WF
BFU550WF

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
  • Gain: 12dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock6,570
BFU550WX
BFU550WX

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT323-3

  • Manufacturer: NXP USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.6dB @ 900MHz
  • Gain: 18dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
In Stock47,352
BFU550XAR
BFU550XAR

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT143B

  • Manufacturer: NXP USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.75db @ 900MHz
  • Gain: 21.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Gull Wing
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
In Stock179,436
BFU550XRR
BFU550XRR

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT143R

  • Manufacturer: NXP USA Inc.
  • Series: Automotive, AEC-Q101
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
  • Gain: 21.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
In Stock3,636
BFU550XRVL

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT143R

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
In Stock8,658
BFU550XVL
BFU550XVL

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT143B

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
  • Gain: 15.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Gull Wing
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
In Stock7,974
BFU580GX
BFU580GX

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 11GHZ SOT223

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 11GHz
  • Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz
  • Gain: 10.5dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
In Stock7,128
BFU580QX
BFU580QX

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 10.5GHZ SOT89-3

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 1.3dB @ 1.8GHz
  • Gain: 8.5dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
In Stock19,668
BFU590GX
BFU590GX

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8.5GHZ SOT223

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 80mA, 8V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
In Stock58,812
BFU590QX
BFU590QX

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 8GHZ SOT89-3

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 6.5dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 80mA, 8V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89-3
In Stock29,274
BFU610F,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5.5V 15GHZ 4DFP

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 15GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.7dB @ 1.5GHz ~ 5.8GHz
  • Gain: 13.5dB ~ 23.5dB
  • Power - Max: 136mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 1mA, 2V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
In Stock7,002
BFU630F,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5.5V 21GHZ 4DFP

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 21GHz
  • Noise Figure (dB Typ @ f): 0.75dB ~ 1.3dB @ 1.5GHz ~ 5.8GHz
  • Gain: 13dB ~ 22.5dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
In Stock43,860
BFU660F,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5.5V 21GHZ 4DFP

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 21GHz
  • Noise Figure (dB Typ @ f): 0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
  • Gain: 12dB ~ 21dB
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 60mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
In Stock21,708
BFU668F,115

Transistors - Bipolar (BJT) - RF

TRANSISTOR NPN SOT343F

  • Manufacturer: NXP USA Inc.
  • Series: *
  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
In Stock2,484
BFU690F,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5.5V 18GHZ 4DFP

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: 18GHz
  • Noise Figure (dB Typ @ f): 0.6dB ~ 0.7dG @ 1.5GHz ~ 2.4GHz
  • Gain: 15.5dB ~ 18.5dB
  • Power - Max: 230mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
In Stock93,192
BFU710F,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 2.8V 43GHZ 4DFP

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 43GHz
  • Noise Figure (dB Typ @ f): 0.85dB ~ 1.45dB @ 5.8GHz ~ 12GHz
  • Gain: -
  • Power - Max: 136mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 2V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
In Stock26,034
BFU725F,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 2.8V 70GHZ 4DFP

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 70GHz
  • Noise Figure (dB Typ @ f): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
  • Gain: 10dB ~ 24dB
  • Power - Max: 136mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
In Stock7,164
BFU725F/N1,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 2.8V 55GHZ 4SO

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 55GHz
  • Noise Figure (dB Typ @ f): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
  • Gain: 10dB ~ 24dB
  • Power - Max: 136mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343 Reverse Pinning
  • Supplier Device Package: 4-SO
In Stock92,274
BFU730F,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 2.8V 55GHZ 4DFP

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 55GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz
  • Gain: -
  • Power - Max: 197mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 2V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
In Stock56,682
BFU730LXZ
BFU730LXZ

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 3V 53GHZ 3DFN1006

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3V
  • Frequency - Transition: 53GHz
  • Noise Figure (dB Typ @ f): 0.75dB @ 6GHz
  • Gain: 15.8dB
  • Power - Max: 160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-XFDFN
  • Supplier Device Package: 3-DFN1006 (1.0x0.6)
In Stock89,202
BFU760F,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 2.8V 45GHZ 4DFP

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
  • Gain: -
  • Power - Max: 220mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
In Stock2,988
BFU768F,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 2.8V 70MA 4DFP

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.1dB @ 2.4GHz
  • Gain: 13.1dB
  • Power - Max: 220mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
In Stock5,112
BFU790F,115

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 2.8V 25GHZ 4DFP

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
  • Gain: -
  • Power - Max: 234mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 235 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: 4-DFP
In Stock4,986
BFU910FX
BFU910FX

NXP

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 9.5V SOT343F

  • Manufacturer: NXP USA Inc.
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 13.5dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
In Stock49,578
BFY193PZZZA1
BFY193PZZZA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 12V 7.5GHZ MICRO X1

  • Manufacturer: Infineon Technologies
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7.5GHz
  • Noise Figure (dB Typ @ f): 2.3dB ~ 2.9dB @ 2GHz
  • Gain: 12.5dB ~ 13.5dB
  • Power - Max: 580mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: MICRO-X1
  • Supplier Device Package: MICRO-X1
In Stock6,336
BFY90
BFY90

Microsemi

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.3GHZ TO72

  • Manufacturer: Microsemi Corporation
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 2.5dB ~ 5dB @ 500MHz
  • Gain: 20dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
In Stock2,484
BFY90
BFY90

Central Semiconductor Corp

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 15V 1.4GHZ TO72

  • Manufacturer: Central Semiconductor Corp
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 5.5dB @ 800MHz
  • Gain: 23dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
In Stock23,904
BGB 540 E6327
BGB 540 E6327

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 3.5V SOT343-4

  • Manufacturer: Infineon Technologies
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain: 16dB ~ 17.5dB
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
In Stock6,318
BGR405H6327XTSA1
BGR405H6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 5V SOT343-4

  • Manufacturer: Infineon Technologies
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 400MHz ~ 1.8GHz
  • Gain: -
  • Power - Max: 50mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 12mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
In Stock6,822
BGR420H6327XTSA1
BGR420H6327XTSA1

Infineon Technologies

Transistors - Bipolar (BJT) - RF

RF TRANS NPN 13V SOT343-4

  • Manufacturer: Infineon Technologies
  • Series: -
  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 13V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
  • Gain: -
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
In Stock8,244