Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDD6796

FDD6796

For Reference Only

Part Number FDD6796
PNEDA Part # FDD6796
Description MOSFET N-CH 25V 20A D-PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,758
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 17 - Apr 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDD6796 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDD6796
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDD6796, FDD6796 Datasheet (Total Pages: 6, Size: 302.52 KB)
PDFFDD6796 Datasheet Cover
FDD6796 Datasheet Page 2 FDD6796 Datasheet Page 3 FDD6796 Datasheet Page 4 FDD6796 Datasheet Page 5 FDD6796 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDD6796 Datasheet
  • where to find FDD6796
  • ON Semiconductor

  • ON Semiconductor FDD6796
  • FDD6796 PDF Datasheet
  • FDD6796 Stock

  • FDD6796 Pinout
  • Datasheet FDD6796
  • FDD6796 Supplier

  • ON Semiconductor Distributor
  • FDD6796 Price
  • FDD6796 Distributor

FDD6796 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C20A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs41nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2315pF @ 13V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 42W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD-PAK (TO-252)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

IPP100N06S205AKSA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5110pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

IRF6201TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

27A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

2.45mOhm @ 27A, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

195nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

8555pF @ 16V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

STL8N6F7

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™ F7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

25mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

450pF @ 25V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 60W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (3.3x3.3)

Package / Case

8-PowerVDFN

STL12N65M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

12.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

410pF @ 100V

FET Feature

-

Power Dissipation (Max)

48W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (5x6) HV

Package / Case

8-PowerVDFN

IPU105N03L G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 15V

FET Feature

-

Power Dissipation (Max)

38W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

FM24W256-GTR

FM24W256-GTR

Cypress Semiconductor

IC FRAM 256K I2C 1MHZ 8SOIC

SP3304NUTG

SP3304NUTG

Littelfuse

TVS DIODE 3.3V 11.5V 10UDFN

GCM1885C1H6R8BA16D

GCM1885C1H6R8BA16D

Murata

CAP CER 6.8PF 50V C0G/NP0 0603

MIC2026-1YM

MIC2026-1YM

Microchip Technology

IC PW DIST SW DUAL 8SOIC

7443551130

7443551130

Wurth Electronics

FIXED IND 1.3UH 25A 1.8 MOHM SMD

PHV-5R4V155-R

PHV-5R4V155-R

Eaton - Electronics Division

CAP 1.5F -10% +30% 5.4V T/H

GP10J-E3/54

GP10J-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23

IP4220CZ6,125

IP4220CZ6,125

Nexperia

TVS DIODE 5.5V 6TSOP

BC184B

BC184B

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

2N6433

2N6433

Central Semiconductor Corp

THROUGH-HOLE TRANSISTOR-SMALL SI

USBUF01W6

USBUF01W6

STMicroelectronics

FILTER RC(PI) 33 OHM/47PF SMD