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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
Description
In Stock
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FDA79N15
FDA79N15

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 79A TO-3P

  • Manufacturer: ON Semiconductor
  • Series: UniFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 39.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3410pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 417W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
In Stock6,912
FDA8440
FDA8440

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 100A TO-3PN

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 24740pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 306W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
In Stock4,536
FDAF59N30
FDAF59N30

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 300V 34A TO-3PF

  • Manufacturer: ON Semiconductor
  • Series: UniFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 161W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
In Stock3,474
FDAF62N28
FDAF62N28

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 280V 36A TO-3PF

  • Manufacturer: ON Semiconductor
  • Series: UniFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 280V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 51mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4630pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
In Stock7,884
FDAF69N25
FDAF69N25

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 250V 34A TO-3PF

  • Manufacturer: ON Semiconductor
  • Series: UniFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 4640pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
In Stock3,598
FDAF75N28
FDAF75N28

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 280V 46A TO-3PF

  • Manufacturer: ON Semiconductor
  • Series: UniFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 280V
  • Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 144nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 6700pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 215W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
In Stock2,898
FDB0105N407L
FDB0105N407L

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 460A

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 460A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 291nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 23100pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock7,560
FDB0165N807L
FDB0165N807L

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 310A TO263

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 310A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 36A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 304nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 23660pF @ 40V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock16,452
FDB016N04AL7
FDB016N04AL7

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V 160A D2PAK-7

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 167nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 11600pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 283W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock7,812
FDB0170N607L
FDB0170N607L

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 300A D2PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 39A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 243nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 19250pF @ 30V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock3,276
FDB0190N807L
FDB0190N807L

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 270A D2PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 34A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 249nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 19110pF @ 40V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock8,928
FDB024N04AL7
FDB024N04AL7

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 40V D2PAK-7

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7300pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 214W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock3,526
FDB024N06
FDB024N06

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 120A D2PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 226nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 14885pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 395W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock18,852
FDB024N08BL7
FDB024N08BL7

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 120A D2PAK7

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 178nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13530pF @ 40V
  • FET Feature: -
  • Power Dissipation (Max): 246W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock25,758
FDB0250N807L
FDB0250N807L

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 80V 240A D2PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 15400pF @ 40V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock7,038
FDB0260N1007L
FDB0260N1007L

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 200A D2PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 2.6mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8545pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock8,946
FDB029N06
FDB029N06

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 120A D2PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9815pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock7,146
FDB0300N1007L
FDB0300N1007L

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 200A D2PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8295pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock2,484
FDB031N08
FDB031N08

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 120A D2PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 15160pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock15,612
FDB035AN06A0
FDB035AN06A0

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 80A TO-263AB

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock38,268
FDB035AN06A0-F085
FDB035AN06A0-F085

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 22A TO-263AB

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101, PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 124nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock5,364
FDB035N10A
FDB035N10A

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 120A D2PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7295pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 333W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock3,078
FDB039N06
FDB039N06

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 120A D2PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 133nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8235pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 231W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock7,164
FDB045AN08A0
FDB045AN08A0

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 90A D2PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock14,508
FDB045AN08A0-F085
FDB045AN08A0-F085

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 19A D2PAK

  • Manufacturer: ON Semiconductor
  • Series: Automotive, AEC-Q101, PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 138nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 310W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263AB
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock3,636
FDB047N10
FDB047N10

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 100V 120A D2PAK

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 15265pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock29,268
FDB050AN06A0
FDB050AN06A0

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 60V 80A TO-263AB

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3900pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 245W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock21,534
FDB060AN08A0
FDB060AN08A0

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 75V 80A TO-263AB

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 255W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D²PAK
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
In Stock28,554
FDB0630N1507L
FDB0630N1507L

ON Semiconductor

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 150V 130A

  • Manufacturer: ON Semiconductor
  • Series: PowerTrench®
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 6.4mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9895pF @ 75V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock3,492
FDB0690N1507L
FDB0690N1507L

ON Semiconductor

Transistors - FETs, MOSFETs - Single

150V TO263 7L JEDEC GREEN EMC

  • Manufacturer: ON Semiconductor
  • Series: -
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 6.9mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 8775pF @ 75V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-7
  • Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
In Stock6,912