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FDB024N08BL7

FDB024N08BL7

For Reference Only

Part Number FDB024N08BL7
PNEDA Part # FDB024N08BL7
Description MOSFET N-CH 80V 120A D2PAK7
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 25,758
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB024N08BL7 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB024N08BL7
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDB024N08BL7, FDB024N08BL7 Datasheet (Total Pages: 11, Size: 756.54 KB)
PDFFDB024N08BL7 Datasheet Cover
FDB024N08BL7 Datasheet Page 2 FDB024N08BL7 Datasheet Page 3 FDB024N08BL7 Datasheet Page 4 FDB024N08BL7 Datasheet Page 5 FDB024N08BL7 Datasheet Page 6 FDB024N08BL7 Datasheet Page 7 FDB024N08BL7 Datasheet Page 8 FDB024N08BL7 Datasheet Page 9 FDB024N08BL7 Datasheet Page 10 FDB024N08BL7 Datasheet Page 11

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FDB024N08BL7 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs178nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds13530pF @ 40V
FET Feature-
Power Dissipation (Max)246W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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