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FDB050AN06A0

FDB050AN06A0

For Reference Only

Part Number FDB050AN06A0
PNEDA Part # FDB050AN06A0
Description MOSFET N-CH 60V 80A TO-263AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 21,534
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB050AN06A0 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB050AN06A0
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDB050AN06A0, FDB050AN06A0 Datasheet (Total Pages: 13, Size: 901.83 KB)
PDFFDP050AN06A0 Datasheet Cover
FDP050AN06A0 Datasheet Page 2 FDP050AN06A0 Datasheet Page 3 FDP050AN06A0 Datasheet Page 4 FDP050AN06A0 Datasheet Page 5 FDP050AN06A0 Datasheet Page 6 FDP050AN06A0 Datasheet Page 7 FDP050AN06A0 Datasheet Page 8 FDP050AN06A0 Datasheet Page 9 FDP050AN06A0 Datasheet Page 10 FDP050AN06A0 Datasheet Page 11

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FDB050AN06A0 Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C18A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3900pF @ 25V
FET Feature-
Power Dissipation (Max)245W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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