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Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

Transistors

Records 64,903
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Part Number
Description
In Stock
Quantity
CSD17304Q3
CSD17304Q3

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 56A 8SON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 17A, 8V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 4.5V
  • Vgs (Max): +10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
  • Package / Case: 8-PowerTDFN
In Stock5,076
CSD17305Q5A
CSD17305Q5A

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A 8SON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 8V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.3nC @ 4.5V
  • Vgs (Max): +10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSONP (5x6)
  • Package / Case: 8-PowerTDFN
In Stock8,658
CSD17306Q5A
CSD17306Q5A

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A 8SON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 22A, 8V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.3nC @ 4.5V
  • Vgs (Max): +10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 2170pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSONP (5x6)
  • Package / Case: 8-PowerTDFN
In Stock38,988
CSD17307Q5A
CSD17307Q5A

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 73A 8SON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Rds On (Max) @ Id, Vgs: 10.5mOhm @ 11A, 8V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
  • Vgs (Max): +10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSONP (5x6)
  • Package / Case: 8-PowerTDFN
In Stock248,046
CSD17308Q3
CSD17308Q3

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 47A 8SON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 8V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
  • Vgs (Max): +10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
  • Package / Case: 8-PowerTDFN
In Stock1,347,594
CSD17308Q3T
CSD17308Q3T

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 50A

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 8V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
  • Vgs (Max): +10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 28W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
  • Package / Case: 8-PowerTDFN
In Stock132,948
CSD17309Q3
CSD17309Q3

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 60A 8SON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Rds On (Max) @ Id, Vgs: 5.4mOhm @ 18A, 8V
  • Vgs(th) (Max) @ Id: 1.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Vgs (Max): +10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
  • Package / Case: 8-PowerTDFN
In Stock42,330
CSD17310Q5A
CSD17310Q5A

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A 8SON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 8V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11.6nC @ 4.5V
  • Vgs (Max): +10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSONP (5x6)
  • Package / Case: 8-PowerTDFN
In Stock224,478
CSD17311Q5
CSD17311Q5

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A 8SON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 8V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
  • Vgs (Max): +10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 4280pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSON-CLIP (5x6)
  • Package / Case: 8-PowerTDFN
In Stock6,786
CSD17312Q5
CSD17312Q5

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A 8SON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Rds On (Max) @ Id, Vgs: 1.5mOhm @ 35A, 8V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 4.5V
  • Vgs (Max): +10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 5240pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSON-CLIP (5x6)
  • Package / Case: 8-PowerTDFN
In Stock48,042
CSD17313Q2
CSD17313Q2

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5A 6SON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
  • Vgs (Max): +10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WSON (2x2)
  • Package / Case: 6-WDFN Exposed Pad
In Stock269,310
CSD17313Q2Q1
CSD17313Q2Q1

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5A 6SON

  • Manufacturer:
  • Series: Automotive, AEC-Q100, NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
  • Vgs (Max): +10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WSON (2x2)
  • Package / Case: 6-WDFN Exposed Pad
In Stock43,104
CSD17313Q2Q1T
CSD17313Q2Q1T

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5A 6WSON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
  • Vgs (Max): +10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 17W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WSON (2x2)
  • Package / Case: 6-WDFN Exposed Pad
In Stock8,514
CSD17313Q2T
CSD17313Q2T

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 5A

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
  • Vgs (Max): +10V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 17W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WSON (2x2)
  • Package / Case: 6-WDFN Exposed Pad
In Stock22,104
CSD17318Q2
CSD17318Q2

Texas Instruments

Transistors - FETs, MOSFETs - Single

30V N CH MOSFET

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
  • Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 16W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WSON (2x2)
  • Package / Case: 6-WDFN Exposed Pad
In Stock2,916
CSD17318Q2T
CSD17318Q2T

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CHANNEL 30V 25A 6WSON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
  • Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 879pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 16W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WSON (2x2)
  • Package / Case: 6-WDFN Exposed Pad
In Stock19,392
CSD17322Q5A
CSD17322Q5A

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 87A 8SON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 8V
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 14A, 8V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.3nC @ 4.5V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 695pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSONP (5x6)
  • Package / Case: 8-PowerTDFN
In Stock2,754
CSD17327Q5A
CSD17327Q5A

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 65A 8SON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 8V
  • Rds On (Max) @ Id, Vgs: 12.2mOhm @ 11A, 8V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.4nC @ 4.5V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 506pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSONP (5x6)
  • Package / Case: 8-PowerTDFN
In Stock2,100
CSD17381F4
CSD17381F4

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 3.1A 0402

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 109mOhm @ 500mA, 8A
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.35nC @ 4.5V
  • Vgs (Max): 12V
  • Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PICOSTAR
  • Package / Case: 3-XFDFN
In Stock246,372
CSD17381F4T
CSD17381F4T

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 3.1A 0402

  • Manufacturer:
  • Series: FemtoFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 109mOhm @ 500mA, 8V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.35nC @ 4.5V
  • Vgs (Max): 12V
  • Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PICOSTAR
  • Package / Case: 3-XFDFN
In Stock160,176
CSD17382F4
CSD17382F4

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 2.3A LGA

  • Manufacturer:
  • Series: FemtoFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
  • Rds On (Max) @ Id, Vgs: 64mOhm @ 500mA, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
  • Vgs (Max): 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 347pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PICOSTAR
  • Package / Case: 3-XFDFN
In Stock332,808
CSD17382F4T
CSD17382F4T

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 2.3A PICOSTAR

  • Manufacturer:
  • Series: FemtoFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
  • Rds On (Max) @ Id, Vgs: 64mOhm @ 500mA, 8V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
  • Vgs (Max): 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 347pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PICOSTAR
  • Package / Case: 3-XFDFN
In Stock112,944
CSD17483F4
CSD17483F4

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 1.5A 3PICOSTAR

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 8V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V
  • Vgs (Max): 12V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PICOSTAR
  • Package / Case: 3-XFDFN
In Stock1,523,478
CSD17483F4T
CSD17483F4T

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 1.5A 3PICOSTAR

  • Manufacturer:
  • Series: FemtoFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 8V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 4.5V
  • Vgs (Max): 12V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PICOSTAR
  • Package / Case: 3-XFDFN
In Stock180,276
CSD17484F4
CSD17484F4

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 3A 3-PICOSTAR

  • Manufacturer:
  • Series: FemtoFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
  • Rds On (Max) @ Id, Vgs: 121mOhm @ 500mA, 8V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
  • Vgs (Max): 12V
  • Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PICOSTAR
  • Package / Case: 3-XFDFN
In Stock630,450
CSD17484F4T
CSD17484F4T

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 1.5A 3PICOSTAR

  • Manufacturer:
  • Series: FemtoFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
  • Rds On (Max) @ Id, Vgs: 121mOhm @ 500mA, 8V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.2nC @ 8V
  • Vgs (Max): 12V
  • Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 3-PICOSTAR
  • Package / Case: 3-XFDFN
In Stock1,515,954
CSD17501Q5A
CSD17501Q5A

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A 8SON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2.9mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2630pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSONP (5x6)
  • Package / Case: 8-PowerTDFN
In Stock25,326
CSD17505Q5A
CSD17505Q5A

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A 8SON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1980pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSONP (5x6)
  • Package / Case: 8-PowerTDFN
In Stock6,714
CSD17506Q5A
CSD17506Q5A

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 100A 8SON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSONP (5x6)
  • Package / Case: 8-PowerTDFN
In Stock116,904
CSD17507Q5A
CSD17507Q5A

Texas Instruments

Transistors - FETs, MOSFETs - Single

MOSFET N-CH 30V 65A 8SON

  • Manufacturer:
  • Series: NexFET™
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 10.8mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-VSONP (5x6)
  • Package / Case: 8-PowerTDFN
In Stock68,202