Transistors

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Records 64,903

Page 1101/2164

Part Number	Description	In Stock
CSD16325Q5 Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 5X6 100A 8SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 8V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 12.5V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock39,816
CSD16325Q5C Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 8V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 12.5V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock7,038
CSD16327Q3 Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 60A 8SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 12.5V FET Feature: - Power Dissipation (Max): 3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Package / Case: 8-PowerTDFN	In Stock88,392
CSD16327Q3T Texas Instruments	Transistors - FETs, MOSFETs - Single CSD16327Q3T Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 12.5V FET Feature: - Power Dissipation (Max): 74W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Package / Case: 8-PowerTDFN	In Stock22,704
CSD16340Q3 Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 60A 8SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 8V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12.5V FET Feature: - Power Dissipation (Max): 3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Package / Case: 8-PowerTDFN	In Stock523,854
CSD16340Q3T Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 25V 60A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 8V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12.5V FET Feature: - Power Dissipation (Max): 3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Package / Case: 8-PowerTDFN	In Stock17,682
CSD16342Q5A Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 8V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 12.5V FET Feature: - Power Dissipation (Max): 3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock18,612
CSD16401Q5 Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8-SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 12.5V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock42,162
CSD16401Q5T Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 12.5V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock5,580
CSD16403Q5A Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8-SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 12.5V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock81,288
CSD16404Q5A Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 81A 8-SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 81A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.1mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 12.5V FET Feature: - Power Dissipation (Max): 3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock166,230
CSD16406Q3 Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 60A 8-SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12.5V FET Feature: - Power Dissipation (Max): 2.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Package / Case: 8-PowerTDFN	In Stock101,322
CSD16407Q5 Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8-SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 12.5V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock3,456
CSD16407Q5C Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 12.5V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock8,136
CSD16408Q5 Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 113A 5X6 8SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 113A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 12.5V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock6,930
CSD16408Q5C Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 113A 8SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 113A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 12.5V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock5,778
CSD16409Q3 Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 60A 8-SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.2mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 12.5V FET Feature: - Power Dissipation (Max): 2.6W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock3,870
CSD16410Q5A Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 59A 8-SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 12.5V FET Feature: - Power Dissipation (Max): 3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock4,662
CSD16411Q3 Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 56A 8-SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 12.5V FET Feature: - Power Dissipation (Max): 2.7W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON (3.3x3.3) Package / Case: 8-PowerVDFN	In Stock121,398
CSD16412Q5A Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 52A 8-SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.8nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 12.5V FET Feature: - Power Dissipation (Max): 3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock5,004
CSD16413Q5A Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8-SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.9mOhm @ 24A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 12.5V FET Feature: - Power Dissipation (Max): 3.1W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock3,654
CSD16414Q5 Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8-SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 12.5V FET Feature: - Power Dissipation (Max): 3.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock23,388
CSD16415Q5 Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 8SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.15mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 12.5V FET Feature: - Power Dissipation (Max): 3.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock6,552
CSD16415Q5T Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.15mOhm @ 40A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V Vgs (Max): +16V, -12V Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 12.5V FET Feature: - Power Dissipation (Max): 3.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock14,232
CSD16556Q5B Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.07mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6180pF @ 15V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 191W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock24,012
CSD16570Q5B Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.59mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 12V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 195W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock7,256
CSD16570Q5BT Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8VSON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.59mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 12V FET Feature: - Power Dissipation (Max): 3.2W (Ta), 195W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock52,704
CSD17301Q5A Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 28A 8SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 8V Vgs(th) (Max) @ Id: 1.55V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 3480pF @ 15V FET Feature: - Power Dissipation (Max): 3.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock123,264
CSD17302Q5A Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 87A 8SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 87A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Rds On (Max) @ Id, Vgs: 7.9mOhm @ 14A, 8V Vgs(th) (Max) @ Id: 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 15V FET Feature: - Power Dissipation (Max): 3W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSONP (5x6) Package / Case: 8-PowerTDFN	In Stock23,154
CSD17303Q5 Texas Instruments	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 100A 8SON Manufacturer: Series: NexFET™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 8V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V Vgs (Max): +10V, -8V Input Capacitance (Ciss) (Max) @ Vds: 3420pF @ 15V FET Feature: - Power Dissipation (Max): 3.2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-VSON-CLIP (5x6) Package / Case: 8-PowerTDFN	In Stock8,856

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