CSD17311Q5
For Reference Only
| Part Number | CSD17311Q5 |
| PNEDA Part # | CSD17311Q5 |
| Description | MOSFET N-CH 30V 100A 8SON |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 6,786 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Apr 1 - Apr 6 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CSD17311Q5 Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD17311Q5 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD17311Q5 Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 30A, 8V |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 4.5V |
| Vgs (Max) | +10V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 4280pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON-CLIP (5x6) |
| Package / Case | 8-PowerTDFN |
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Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7mOhm @ 60A, 10V Vgs(th) (Max) @ Id 2V @ 150µA Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4210pF @ 25V FET Feature - Power Dissipation (Max) 210W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
