CSD16340Q3
For Reference Only
| Part Number | CSD16340Q3 |
| PNEDA Part # | CSD16340Q3 |
| Description | MOSFET N-CH 25V 60A 8SON |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 523,854 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 16 - Mar 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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CSD16340Q3 Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD16340Q3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD16340Q3 Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 8V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 20A, 8V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.2nC @ 4.5V |
| Vgs (Max) | +10V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 12.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSON-CLIP (3.3x3.3) |
| Package / Case | 8-PowerTDFN |
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.8Ohm @ 1A, 10V Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 165pF @ 25V FET Feature - Power Dissipation (Max) 30W (Tc) Operating Temperature 150°C Mounting Type Surface Mount Supplier Device Package MP-3A Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Vishay Siliconix Series TrenchFET® Gen IV FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 23A (Ta), 79.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id 3.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1710pF @ 30V FET Feature - Power Dissipation (Max) 5W (Ta), 57W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8mOhm @ 52A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 2880pF @ 25V FET Feature - Power Dissipation (Max) 130W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
