Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

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Part Number	Description	In Stock
C3M0016120K Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single SIC MOSFET G3 1200V 16 MOHM Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1.2kV Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 22.3mOhm @ 75A, 15V Vgs(th) (Max) @ Id: 3.6V @ 23mA Gate Charge (Qg) (Max) @ Vgs: 211nC @ 15V Vgs (Max): +15V, -4V Input Capacitance (Ciss) (Max) @ Vds: 6085pF @ 1000V FET Feature: - Power Dissipation (Max): 556W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	In Stock10,008
C3M0021120K Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single 1200V, 21 MOHM, G3 SIC MOSFET Manufacturer: Cree/Wolfspeed Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,174
C3M0030090K Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single ZFET 900V, 30 MOHM, G3 SIC MOSFE Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 39mOhm @ 35A, 15V Vgs(th) (Max) @ Id: 3.5V @ 11mA Gate Charge (Qg) (Max) @ Vgs: 87nC @ 15V Vgs (Max): +15V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1864pF @ 600V FET Feature: - Power Dissipation (Max): 149W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4 Package / Case: TO-247-4	In Stock7,584
C3M0065090D Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 36A TO247-3 Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 15V Vgs (Max): +18V, -8V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V FET Feature: - Power Dissipation (Max): 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock75,426
C3M0065090J Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 35A D2PAK-7 Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V Vgs (Max): +19V, -8V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V FET Feature: - Power Dissipation (Max): 113W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock141,516
C3M0065090J-TR Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 35A D2PAK-7 Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 2.1V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V Vgs (Max): +19V, -8V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V FET Feature: - Power Dissipation (Max): 113W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock5,796
C3M0065100J Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 35A D2PAK-7 Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 3.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V Vgs (Max): +15V, -4V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V FET Feature: - Power Dissipation (Max): 113.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock13,236
C3M0065100J-TR Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single 1000V, 65 MOHM, G3 SIC MOSFET Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 3.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V Vgs (Max): +15V, -4V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V FET Feature: - Power Dissipation (Max): 113.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock6,372
C3M0065100K Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single 1000V, 65 MOHM, G3 SIC MOSFET Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 3.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V Vgs (Max): +19V, -8V Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V FET Feature: - Power Dissipation (Max): 113.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	In Stock27,096
C3M0075120D Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single MOSFET 1200V, 75 MOHM, G3 SIC Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 54nC @ 15V Vgs (Max): +19V, -8V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V FET Feature: - Power Dissipation (Max): 113.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock8,484
C3M0075120J Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 30A D2PAK-7 Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V Vgs (Max): +19V, -8V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V FET Feature: - Power Dissipation (Max): 113.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock20,364
C3M0075120J-TR Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single 1200V, 75 MOHM, G3 SIC MOSFET ON Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V Vgs (Max): +15V, -4V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V FET Feature: - Power Dissipation (Max): 113.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock7,812
C3M0075120K Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1200V 30A TO247-4 Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 15V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V Vgs (Max): +19V, -8V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V FET Feature: - Power Dissipation (Max): 113.6W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	In Stock19,980
C3M0120090D Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single 900V, 120 MOHM, G3 SIC MOSFET Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V Vgs (Max): +18V, -8V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V FET Feature: - Power Dissipation (Max): 97W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock23,154
C3M0120090J Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 22A Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V Vgs (Max): +18V, -8V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V FET Feature: - Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock25,476
C3M0120090J-TR Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 22A Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V Vgs (Max): +18V, -8V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V FET Feature: - Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock17,316
C3M0120100J Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 22A D2PAK-7 Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V Vgs (Max): +15V, -4V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V FET Feature: - Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock18,252
C3M0120100K Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 22A TO247-4L Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V Vgs(th) (Max) @ Id: 3.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V FET Feature: - Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	In Stock7,656
C3M0280090D Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 11.5A Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V Vgs (Max): +18V, -8V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V FET Feature: - Power Dissipation (Max): 54W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	In Stock22,812
C3M0280090J Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 11A Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V Vgs (Max): +18V, -8V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock16,776
C3M0280090J-TR Cree/Wolfspeed	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 11A Manufacturer: Cree/Wolfspeed Series: C3M™ FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 15V Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V Vgs(th) (Max) @ Id: 3.5V @ 1.2mA Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V Vgs (Max): +18V, -8V Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK-7 Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock19,056
CA/JCOP/MF4K/4B-UZ NXP	Transistors - FETs, MOSFETs - Single CA/JCOP/MF4K/4B-UZ Manufacturer: NXP USA Inc. Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,812
CC1202 Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 13A TO-247 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,164
CDM22010-650 SL Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 10A 650V TO220 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1168pF @ 25V FET Feature: - Power Dissipation (Max): 2W (Ta), 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock16,524
CDM22011-600LRFP SL Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 11A 600V TO-220FP Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23.05nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 763pF @ 100V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock16,764
CDM22012-800LRFP SL Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 12A Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 450mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52.4nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 100V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock9,348
CDM2205-800FP SL Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 5A 800V TO-220FP Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.4nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V FET Feature: - Power Dissipation (Max): 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock21,180
CDM2206-800LR SL Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 6A TO220 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.3nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	In Stock18,972
CDM2208-800FP SL Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 8A 800V TO-220FP Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24.45nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1110pF @ 25V FET Feature: - Power Dissipation (Max): 57W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	In Stock8,352
CDM3-800 TR13 Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 3A 800V DPAK Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 25V FET Feature: - Power Dissipation (Max): 80W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,696

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