Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1097/2164

Part Number	Description	In Stock
CMPDM7002AG BK Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.28A SOT-23 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.59nC @ 4.5V Vgs (Max): 40V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,312
CMPDM7002AG TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.28A SOT-23 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): 40V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock85,914
CMPDM7002AHC TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 0.28A SOT-23 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock56,796
CMPDM7003 TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 50V 280MA SOT23 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.76nC @ 4.5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock54,360
CMS16N06D-HF Comchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60VDS 20VGS 64A TO-2 Manufacturer: Comchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 815pF @ 15V FET Feature: - Power Dissipation (Max): 2W (Ta), 27W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock21,840
CMS16P06H8-HF Comchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60VDS 20VGS 64A DFN5 Manufacturer: Comchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1256pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5x6 (PR-PAK) Package / Case: 8-PowerTDFN	In Stock26,670
CMS45P03H8-HF Comchip Technology	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30VDS 20VGS 150A DFN Manufacturer: Comchip Technology Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta), 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2215pF @ 15V FET Feature: - Power Dissipation (Max): 2W (Ta), 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5x6 (PR-PAK) Package / Case: 8-PowerTDFN	In Stock24,198
CMS70N04H8-HF Comchip Technology	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40VDS 20VGS 70A DFN5 Manufacturer: Comchip Technology Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.7nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1278pF @ 25V FET Feature: - Power Dissipation (Max): 2W (Ta), 72.3W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN5x6 (PR-PAK) Package / Case: 8-PowerTDFN	In Stock22,290
CMUDM7001 TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 0.1A SOT-523 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.57nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 3V FET Feature: - Power Dissipation (Max): 250mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SC-89, SOT-490	In Stock8,676
CMUDM7004 TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V 0.45A SOT523 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.79nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V FET Feature: - Power Dissipation (Max): 250mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	In Stock136,464
CMUDM7005 TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 650MA SOT523 Manufacturer: Central Semiconductor Corp Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V FET Feature: - Power Dissipation (Max): 300mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	In Stock22,254
CMUDM8001 TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 0.1A SOT523 Manufacturer: Central Semiconductor Corp Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.66nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 3V FET Feature: - Power Dissipation (Max): 250mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	In Stock29,724
CMUDM8004 TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 450MA SOT523 Manufacturer: Central Semiconductor Corp Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.88nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 25V FET Feature: - Power Dissipation (Max): 250mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	In Stock29,934
CMUDM8005 TR Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET P-CH 20V 650MA SOT523 Manufacturer: Central Semiconductor Corp Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 16V FET Feature: - Power Dissipation (Max): 300mW (Ta) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	In Stock3,438
CP373-CMPDM303-CT20 Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET TRANSISTOR N-CH CHIP Manufacturer: Central Semiconductor Corp Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,938
CP373-CMPDM303NH-CT Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET TRANSISTOR N-CH CHIP Manufacturer: Central Semiconductor Corp Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,184
CP373-CMPDM303NH-WN Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET TRANSISTOR N-CH CHIP Manufacturer: Central Semiconductor Corp Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,562
CP373-CTLDM303N-CT Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET TRANSISTOR N-CH CHIP Manufacturer: Central Semiconductor Corp Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,454
CP373-CTLDM303N-WN Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET TRANSISTOR N-CH CHIP Manufacturer: Central Semiconductor Corp Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,238
CP773-CMPDM302PH-CT Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V Manufacturer: Central Semiconductor Corp Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V FET Feature: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock8,352
CP773-CMPDM302PH-WN Central Semiconductor Corp	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V Manufacturer: Central Semiconductor Corp Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 91mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V FET Feature: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: Die Package / Case: Die	In Stock2,916
CPC3701C IXYS Integrated Circuits Division	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SOT89 Manufacturer: IXYS Integrated Circuits Division Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	In Stock3,078
CPC3701CTR IXYS Integrated Circuits Division	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V SOT89 Manufacturer: IXYS Integrated Circuits Division Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 1Ohm @ 300mA, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	In Stock7,704
CPC3703C IXYS Integrated Circuits Division	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 360MA SOT-89 Manufacturer: IXYS Integrated Circuits Division Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 4Ohm @ 200mA, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1.6W (Ta) Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89-3 Package / Case: TO-243AA	In Stock3,078
CPC3703CTR IXYS Integrated Circuits Division	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V 360MA SOT-89 Manufacturer: IXYS Integrated Circuits Division Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 4Ohm @ 200mA, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-89-3 Package / Case: TO-243AA	In Stock59,496
CPC3708CTR IXYS Integrated Circuits Division	Transistors - FETs, MOSFETs - Single MOSFET N-CH 350V 0.005A SOT-89 Manufacturer: IXYS Integrated Circuits Division Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 5mA (Ta) Drive Voltage (Max Rds On, Min Rds On): -0.35V Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: Depletion Mode Power Dissipation (Max): 1.1W (Ta) Operating Temperature: -40°C ~ 110°C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	In Stock6,480
CPC3708ZTR IXYS Integrated Circuits Division	Transistors - FETs, MOSFETs - Single MOSFET N-CH 350V 0.005A SOT-223 Manufacturer: IXYS Integrated Circuits Division Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: 5mA (Ta) Drive Voltage (Max Rds On, Min Rds On): -0.35V Rds On (Max) @ Id, Vgs: 14Ohm @ 50mA, 350mV Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: Depletion Mode Power Dissipation (Max): 2.5W (Ta) Operating Temperature: -40°C ~ 110°C (TA) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	In Stock3,420
CPC3710C IXYS Integrated Circuits Division	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V SOT89 Manufacturer: IXYS Integrated Circuits Division Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 10Ohm @ 220mA, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	In Stock5,832
CPC3710CTR IXYS Integrated Circuits Division	Transistors - FETs, MOSFETs - Single MOSFET N-CH 250V SOT89 Manufacturer: IXYS Integrated Circuits Division Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 10Ohm @ 220mA, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	In Stock6,318
CPC3714C IXYS Integrated Circuits Division	Transistors - FETs, MOSFETs - Single MOSFET N-CH 350V SOT89 Manufacturer: IXYS Integrated Circuits Division Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 350V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 0V Rds On (Max) @ Id, Vgs: 14Ohm @ 240mA, 0V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V FET Feature: Depletion Mode Power Dissipation (Max): 1.4W (Ta) Operating Temperature: -55°C ~ 125°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-89 Package / Case: TO-243AA	In Stock4,608

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