Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

C3M0065100J-TR

C3M0065100J-TR

For Reference Only

Part Number C3M0065100J-TR
PNEDA Part # C3M0065100J-TR
Description 1000V, 65 MOHM, G3 SIC MOSFET
Manufacturer Cree/Wolfspeed
Unit Price Request a Quote
In Stock 6,372
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

C3M0065100J-TR Resources

Brand Cree/Wolfspeed
ECAD Module ECAD
Mfr. Part NumberC3M0065100J-TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • C3M0065100J-TR Datasheet
  • where to find C3M0065100J-TR
  • Cree/Wolfspeed

  • Cree/Wolfspeed C3M0065100J-TR
  • C3M0065100J-TR PDF Datasheet
  • C3M0065100J-TR Stock

  • C3M0065100J-TR Pinout
  • Datasheet C3M0065100J-TR
  • C3M0065100J-TR Supplier

  • Cree/Wolfspeed Distributor
  • C3M0065100J-TR Price
  • C3M0065100J-TR Distributor

C3M0065100J-TR Specifications

ManufacturerCree/Wolfspeed
SeriesC3M™
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs78mOhm @ 20A, 15V
Vgs(th) (Max) @ Id3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs35nC @ 15V
Vgs (Max)+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds660pF @ 600V
FET Feature-
Power Dissipation (Max)113.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA

The Products You May Be Interested In

STF7N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II Plus

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

950mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.8nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

271pF @ 100V

FET Feature

-

Power Dissipation (Max)

20W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

SPW15N60CFDFKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

13.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

330mOhm @ 9.4A, 10V

Vgs(th) (Max) @ Id

5V @ 750µA

Gate Charge (Qg) (Max) @ Vgs

84nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1820pF @ 25V

FET Feature

-

Power Dissipation (Max)

156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3

Package / Case

TO-247-3

SIR698DP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

7.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

195mOhm @ 2.5A, 10V

Vgs(th) (Max) @ Id

3.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

210pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 23W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

IRF9540NL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

23A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

117mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

97nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 140W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

FQU13N06LTU-WS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

115mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 28W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I-PAK

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Recently Sold

IS42S16160G-7BLI-TR

IS42S16160G-7BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

DS1338U-33+

DS1338U-33+

Maxim Integrated

IC RTC CLK/CALENDAR I2C 8-USOP

LM1458M

LM1458M

ON Semiconductor

IC OPAMP GP 2 CIRCUIT 8SOIC

LTM4625IY#PBF

LTM4625IY#PBF

Linear Technology/Analog Devices

DC DC CONVERTER 0.6-5.5V 5A

PZT3906

PZT3906

ON Semiconductor

TRANS PNP 40V 0.2A SOT223

MAX811SEUS+T

MAX811SEUS+T

Maxim Integrated

IC MPU V-MONITOR 2.93V SOT143-4

SMAJ40CA

SMAJ40CA

Bourns

TVS DIODE 40V 64.5V SMA

MT41J512M8RH-093:E

MT41J512M8RH-093:E

Micron Technology Inc.

IC DRAM 4G PARALLEL 78FBGA

WSL0805R0500FEA

WSL0805R0500FEA

Vishay Dale

RES 0.05 OHM 1% 1/8W 0805

MTP50P03HDLG

MTP50P03HDLG

ON Semiconductor

MOSFET P-CH 30V 50A TO220AB

MT48LC4M16A2P-75 IT:G

MT48LC4M16A2P-75 IT:G

Micron Technology Inc.

IC DRAM 64M PARALLEL 54TSOP

ATXMEGA256A3U-MH

ATXMEGA256A3U-MH

Microchip Technology

IC MCU 8/16BIT 256KB FLASH 64QFN