Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1066/2164

Part Number	Description	In Stock
BSS670S2L Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 540MA SOT-23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V Vgs(th) (Max) @ Id: 2V @ 2.7µA Gate Charge (Qg) (Max) @ Vgs: 2.26nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock112,472
BSS670S2LH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 540MA SOT23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V Vgs(th) (Max) @ Id: 2V @ 2.7µA Gate Charge (Qg) (Max) @ Vgs: 2.26nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock232,266
BSS670S2LH6433XTMA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 540MA SOT23 Manufacturer: Infineon Technologies Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock8,190
BSS670S2LL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 540MA SOT-23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V Vgs(th) (Max) @ Id: 2V @ 2.7µA Gate Charge (Qg) (Max) @ Vgs: 2.26nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock5,004
BSS7728N Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 200MA SOT-23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,830
BSS7728NH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 200MA SOT23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock8,856
BSS7728NH6327XTSA2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 200MA SOT23 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock83,682
BSS7728NL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 200MA SOT-23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock8,946
BSS806NEH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.3A SOT23 Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V Vgs(th) (Max) @ Id: 0.75V @ 11µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,732
BSS806NH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.3A SOT23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V Vgs(th) (Max) @ Id: 750mV @ 11µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,218
BSS806NL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 2.3A SOT23 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V Vgs(th) (Max) @ Id: 750mV @ 11µA Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 2.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 529pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock6,786
BSS816NWH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1.4A SOT323 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V Vgs(th) (Max) @ Id: 0.75V @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 2.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	In Stock82,614
BSS816NW L6327 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 20V 1.4A SOT323 Manufacturer: Infineon Technologies Series: OptiMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V Vgs(th) (Max) @ Id: 750mV @ 3.7µA Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 2.5V Vgs (Max): ±8V Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 10V FET Feature: - Power Dissipation (Max): 500mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-SOT323-3 Package / Case: SC-70, SOT-323	In Stock3,690
BSS83PE6327 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 330MA SOT-23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 3.57nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,506
BSS83PH6327XTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 0.33A SOT23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 3.57nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock1,465,632
BSS83PL6327HTSA1 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 330MA SOT-23 Manufacturer: Infineon Technologies Series: SIPMOS® FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 330mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2Ohm @ 330mA, 10V Vgs(th) (Max) @ Id: 2V @ 80µA Gate Charge (Qg) (Max) @ Vgs: 3.57nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 78pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,322
BSS84 MICROSS/On Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 130MA DIE Manufacturer: MICROSS/On Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock5,994
BSS84 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 130MA SOT-23 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock3,529,890
BSS84,215 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 130MA SOT-23 Manufacturer: Nexperia USA Inc. Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10Ohm @ 130mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V FET Feature: - Power Dissipation (Max): 250mW (Tc) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock585,708
BSS84-7 Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 130MA SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V FET Feature: - Power Dissipation (Max): 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock4,392
BSS84-7-F Diodes Incorporated	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 130MA SOT23-3 Manufacturer: Diodes Incorporated Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 25V FET Feature: - Power Dissipation (Max): 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock11,017,212
BSS84AK,215 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V TO-236AB Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V FET Feature: - Power Dissipation (Max): 350mW (Ta), 1.14W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock731,202
BSS84AK-BR Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 180MA TO236AB Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V FET Feature: - Power Dissipation (Max): 1.14W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock4,392
BSS84AKM,315 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V SOT883 Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V FET Feature: - Power Dissipation (Max): 340mW (Ta), 2.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006-3 Package / Case: SC-101, SOT-883	In Stock86,076
BSS84AKMB,315 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 230MA 3DFN Manufacturer: Nexperia USA Inc. Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta), 2.7W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DFN1006B-3 Package / Case: 3-XFDFN	In Stock3,744
BSS84AKT,115 NXP	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V SC-75 Manufacturer: NXP USA Inc. Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V FET Feature: - Power Dissipation (Max): 250mW (Ta), 770mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-75 Package / Case: SC-75, SOT-416	In Stock8,064
BSS84AKVL Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 180MA TO236AB Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 180mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V FET Feature: - Power Dissipation (Max): 350mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-236AB Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock2,502
BSS84AKW,115 Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 150MA SOT323 Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101, TrenchMOS™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V FET Feature: - Power Dissipation (Max): 260mW (Ta), 830mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70 Package / Case: SC-70, SOT-323	In Stock404,412
BSS84AKW-BX Nexperia	Transistors - FETs, MOSFETs - Single MOSFET P-CHANNEL 50V 150MA SC70 Manufacturer: Nexperia USA Inc. Series: Automotive, AEC-Q101 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 7.5Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V FET Feature: - Power Dissipation (Max): 830mW (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SC-70 Package / Case: SC-70, SOT-323	In Stock7,560
BSS84_D87Z ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 50V 130MA SOT-23 Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 130mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 5V Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 73pF @ 25V FET Feature: - Power Dissipation (Max): 360mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 Package / Case: TO-236-3, SC-59, SOT-23-3	In Stock7,488

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