Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

BSS7728NL6327HTSA1

BSS7728NL6327HTSA1

For Reference Only

Part Number BSS7728NL6327HTSA1
PNEDA Part # BSS7728NL6327HTSA1
Description MOSFET N-CH 60V 200MA SOT-23
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 8,946
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSS7728NL6327HTSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSS7728NL6327HTSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
BSS7728NL6327HTSA1, BSS7728NL6327HTSA1 Datasheet (Total Pages: 8, Size: 102.33 KB)
PDFBSS7728NL6327HTSA1 Datasheet Cover
BSS7728NL6327HTSA1 Datasheet Page 2 BSS7728NL6327HTSA1 Datasheet Page 3 BSS7728NL6327HTSA1 Datasheet Page 4 BSS7728NL6327HTSA1 Datasheet Page 5 BSS7728NL6327HTSA1 Datasheet Page 6 BSS7728NL6327HTSA1 Datasheet Page 7 BSS7728NL6327HTSA1 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • BSS7728NL6327HTSA1 Datasheet
  • where to find BSS7728NL6327HTSA1
  • Infineon Technologies

  • Infineon Technologies BSS7728NL6327HTSA1
  • BSS7728NL6327HTSA1 PDF Datasheet
  • BSS7728NL6327HTSA1 Stock

  • BSS7728NL6327HTSA1 Pinout
  • Datasheet BSS7728NL6327HTSA1
  • BSS7728NL6327HTSA1 Supplier

  • Infineon Technologies Distributor
  • BSS7728NL6327HTSA1 Price
  • BSS7728NL6327HTSA1 Distributor

BSS7728NL6327HTSA1 Specifications

ManufacturerInfineon Technologies
SeriesSIPMOS®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2.3V @ 26µA
Gate Charge (Qg) (Max) @ Vgs1.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds56pF @ 25V
FET Feature-
Power Dissipation (Max)360mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

SISS30LDN-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

16A (Ta), 55.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2070pF @ 40V

FET Feature

-

Power Dissipation (Max)

4.8W (Ta), 57W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® 1212-8S

Package / Case

PowerPAK® 1212-8S

HUFA75344S3S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

8mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

210nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3200pF @ 25V

FET Feature

-

Power Dissipation (Max)

285W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

IXYS

Series

HiPerFET™, PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

94A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

55mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

220nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

13700pF @ 25V

FET Feature

-

Power Dissipation (Max)

1300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264AA (IXFK)

Package / Case

TO-264-3, TO-264AA

STD47N10F7AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, STripFET™ F7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 22.5A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

1640pF @ 50V

FET Feature

-

Power Dissipation (Max)

60W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FQD6N25TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

4.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1Ohm @ 2.2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

EP4CE40F23I7N

EP4CE40F23I7N

Intel

IC FPGA 328 I/O 484FBGA

TAJA475K016RNJ

TAJA475K016RNJ

CAP TANT 4.7UF 10% 16V 1206

J201

J201

ON Semiconductor

JFET N-CH 40V 0.625W TO92

TSM2323CX RFG

TSM2323CX RFG

Taiwan Semiconductor Corporation

MOSFET P-CHANNEL 20V 4.7A SOT23

CP2102-GM

CP2102-GM

Silicon Labs

IC USB-TO-UART BRIDGE 28VQFN

1SMB36AT3G

1SMB36AT3G

Littelfuse

TVS DIODE 36V 58.1V SMB

SM05T1G

SM05T1G

ON Semiconductor

TVS DIODE 5V 9.8V SOT23-3

AD8250ARMZ-RL

AD8250ARMZ-RL

Analog Devices

IC INST AMP 1 CIRCUIT 10MSOP

NUC2401MNTAG

NUC2401MNTAG

ON Semiconductor

CMC 100MA 2LN 90 OHM SMD

ADG506AKR

ADG506AKR

Analog Devices

IC MULTIPLEXER 16X1 28SOIC

MAX3208EAUB+T

MAX3208EAUB+T

Maxim Integrated

TVS DIODE 10UMAX

MAX999AAUK+T

MAX999AAUK+T

Maxim Integrated

IC COMP BEYOND-THE-RAILS SOT23-5