Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1041/2164

Part Number	Description	In Stock
AUIRLR2905TRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 42A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,532
AUIRLR2905Z Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 42A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 25V FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,442
AUIRLR2908 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 30A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V FET Feature: - Power Dissipation (Max): 120W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,102
AUIRLR3105 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 25A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 37mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V FET Feature: - Power Dissipation (Max): 57W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock7,434
AUIRLR3110Z Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 63A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,876
AUIRLR3114Z Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 42A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 3810pF @ 25V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,912
AUIRLR3410 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 17A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V FET Feature: - Power Dissipation (Max): 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,194
AUIRLR3410TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 17A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V FET Feature: - Power Dissipation (Max): 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,824
AUIRLR3410TRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 17A DPAK Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V FET Feature: - Power Dissipation (Max): 79W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,660
AUIRLR3636 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 99A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 49nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 3779pF @ 50V FET Feature: - Power Dissipation (Max): 143W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock8,964
AUIRLR3705Z Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 42A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V FET Feature: - Power Dissipation (Max): 130W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,410
AUIRLR3915 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 61A DPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 25V FET Feature: - Power Dissipation (Max): 120W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock4,194
AUIRLS3034 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 343A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 162nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10315pF @ 25V FET Feature: - Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,528
AUIRLS3034-7P Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 240A D2PAK-7P Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10990pF @ 40V FET Feature: - Power Dissipation (Max): 380W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock7,740
AUIRLS3034-7TRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 380A D2PAK-7P Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.4mOhm @ 200A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 4.5V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 10990pF @ 40V FET Feature: - Power Dissipation (Max): 380W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	In Stock6,714
AUIRLS3036 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 270A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V FET Feature: - Power Dissipation (Max): 380W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock4,446
AUIRLS3036-7P Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 300A D2PAK-7P Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 11270pF @ 50V FET Feature: - Power Dissipation (Max): 380W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock7,848
AUIRLS3036-7TRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 300A D2PAK-7P Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.9mOhm @ 180A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 11270pF @ 50V FET Feature: - Power Dissipation (Max): 380W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock3,618
AUIRLS3036TRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 270A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V FET Feature: - Power Dissipation (Max): 380W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock2,196
AUIRLS3114Z Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 42A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.9mOhm @ 56A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 3617pF @ 25V FET Feature: - Power Dissipation (Max): 143W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-PAK (TO-252AA) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	In Stock6,066
AUIRLS4030 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 180A D2PAK Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V FET Feature: - Power Dissipation (Max): 370W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock6,030
AUIRLS4030-7P Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 190A D2PAK-7P Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 11490pF @ 50V FET Feature: - Power Dissipation (Max): 370W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock4,266
AUIRLS4030-7TRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 190A D2PAK-7P Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 190A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.9mOhm @ 110A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 11490pF @ 50V FET Feature: - Power Dissipation (Max): 370W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock3,978
AUIRLS4030TRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 180A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 110A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V FET Feature: - Power Dissipation (Max): 370W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock5,580
AUIRLS8409-7P Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET NCH 40V 240A D2PAK Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 266nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 16488pF @ 25V FET Feature: - Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock21,984
AUIRLS8409-7TRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET NCH 40V 240A D2PAK Manufacturer: Infineon Technologies Series: * FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 266nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 16488pF @ 25V FET Feature: - Power Dissipation (Max): 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D²Pak (6 Leads + Tab)	In Stock6,840
AUIRLSL3036 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 270A TO262 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.4mOhm @ 165A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 11210pF @ 50V FET Feature: - Power Dissipation (Max): 380W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock7,758
AUIRLU024Z Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N CH 55V 16A SOT 223 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock2,718
AUIRLU2905 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 42A IPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V FET Feature: - Power Dissipation (Max): 110W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock8,370
AUIRLU3110Z Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 63A IPAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: I-PAK Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock7,488

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