Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 1042/2164

Part Number	Description	In Stock
AUIRLU3114Z Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET NCH 40V 130A IPAK Manufacturer: Infineon Technologies Series: Automotive, AEC-Q101, HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.9mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 2.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 4.5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 3810pF @ 25V FET Feature: - Power Dissipation (Max): 140W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock18,732
AUIRLZ24NS Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V AUTO Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,418
AUIRLZ24NSTRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V D2-PAK AUTO Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock7,434
AUIRLZ44Z Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 51A TO-220AB Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 5V Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: 1620pF @ 25V FET Feature: - Power Dissipation (Max): 80W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock9,792
AUIRLZ44ZL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 51A TO-262 Manufacturer: Infineon Technologies Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	In Stock7,596
AUIRLZ44ZS Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 51A D2PAK Manufacturer: Infineon Technologies Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: -	In Stock7,902
AUIRLZ44ZSTRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 51A D2PAK Manufacturer: Infineon Technologies Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±16V Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: - Package / Case: -	In Stock2,556
AUXAKF1405ZS-7P Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 120A D2PAK7 Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.9mOhm @ 88A, 10V Vgs(th) (Max) @ Id: 4V @ 150µA Gate Charge (Qg) (Max) @ Vgs: 230nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5360pF @ 25V FET Feature: - Power Dissipation (Max): 230W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK (7-Lead) Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB	In Stock5,616
AUXCLFZ24NSTRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 55V 17A D2PAK Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock8,496
AUXDILZ24NS Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH D2PAK Manufacturer: Infineon Technologies Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,382
AUXFN8403TR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V PQFN Manufacturer: Infineon Technologies Series: HEXFET® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 3.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3174pF @ 25V FET Feature: - Power Dissipation (Max): 94W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PQFN (5x6) Package / Case: 8-TQFN Exposed Pad	In Stock6,138
AUXHMF1404ZSTRL Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO263-3 Manufacturer: Infineon Technologies Series: - FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,318
AUXHMF7321D2 Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 4.7A 8-SOIC Manufacturer: Infineon Technologies Series: FETKY™ FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 62mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SO Package / Case: 8-SOIC (0.154", 3.90mm Width)	In Stock8,910
AUXMOS20956STR Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 16SOIC Manufacturer: Infineon Technologies Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,760
AUXS20956S Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 16SOIC Manufacturer: Infineon Technologies Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock6,624
AUXTLR3110Z Infineon Technologies	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V DPAK Manufacturer: Infineon Technologies Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock2,628
BBL4001 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 74A TO220 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 74A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 6.1mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V FET Feature: - Power Dissipation (Max): 2W (Ta), 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Fullpack/TO-220F-3SG Package / Case: TO-220-3 Full Pack	In Stock4,644
BBL4001-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 74A TO220 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 74A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 6.1mOhm @ 37A, 10V Vgs(th) (Max) @ Id: 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 135nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 20V FET Feature: - Power Dissipation (Max): 2W (Ta), 35W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Fullpack/TO-220F-3SG Package / Case: TO-220-3 Full Pack	In Stock9,384
BBS3002-DL-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 100A D2PAK Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 20V FET Feature: - Power Dissipation (Max): 90W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock46,806
BBS3002-DL-E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 100A SMP-FD Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 20V FET Feature: - Power Dissipation (Max): 90W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMP-FD Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock3,024
BBS3002-TL-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 60V 100A Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 20V FET Feature: - Power Dissipation (Max): 90W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D²PAK (TO-263) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	In Stock15,180
BFL4001 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 4.1A TO-220FI Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7Ohm @ 3.25A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 37W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	In Stock5,760
BFL4001-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 4.1A Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7Ohm @ 3.25A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 37W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Fullpack/TO-220F-3SG Package / Case: TO-220-3 Full Pack	In Stock8,028
BFL4001-1EX ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 6.5A TO220 Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.7Ohm @ 3.25A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 37W (Tc) Operating Temperature: 150°C (TA) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Fullpack/TO-220F-3SG Package / Case: TO-220-3 Full Pack	In Stock8,424
BFL4004 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 4.3A TO-220F Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 36W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	In Stock2,988
BFL4004-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 4.3A Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5Ohm @ 3.25A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 36W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3FS Package / Case: TO-220-3 Full Pack	In Stock7,110
BFL4007 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 8.7A TO-220FI Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 680mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	In Stock8,964
BFL4007-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 8.7A Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 680mOhm @ 7A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 40W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3FS Package / Case: TO-220-3 Full Pack	In Stock7,272
BFL4026 ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 3.5A TO-220FI Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 35W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FI(LS) Package / Case: TO-220-3 Full Pack	In Stock7,164
BFL4026-1E ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 3.5A Manufacturer: ON Semiconductor Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.6Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 30V FET Feature: - Power Dissipation (Max): 2W (Ta), 35W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F-3FS Package / Case: TO-220-3 Full Pack	In Stock8,118

«
‹
1
...
1039
1040
1041
1042 (current)
1043
1044
1045
...
2164
›
»

Send Message

Certifications

Transistors

Resources

Support

Social Media

Need Help?
Send Message