AUIRLR3110Z
For Reference Only
| Part Number | AUIRLR3110Z |
| PNEDA Part # | AUIRLR3110Z |
| Description | MOSFET N-CH 100V 63A DPAK |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 6,876 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 31 - Apr 5 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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AUIRLR3110Z Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | AUIRLR3110Z |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
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- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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AUIRLR3110Z Specifications
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 38A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 4.5V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 3980pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 16.5mOhm @ 28A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1696pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 107W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
