Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Transistors - Special Purpose (162)

Records 64,903

Page 1029/2164

Part Number	Description	In Stock
APTM20UM05SG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 317A J3 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 317A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V FET Feature: - Power Dissipation (Max): 1136W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	In Stock4,050
APTM20UM09SG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 195A J3 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 74.5A, 10V Vgs(th) (Max) @ Id: 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 217nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 12300pF @ 25V FET Feature: - Power Dissipation (Max): 780W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	In Stock5,850
APTM50DAM17G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 180A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	In Stock4,752
APTM50DAM19G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 163A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 163A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V FET Feature: - Power Dissipation (Max): 1136W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	In Stock5,760
APTM50DAM35TG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 99A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V FET Feature: - Power Dissipation (Max): 781W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	In Stock7,416
APTM50DAM38CTG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 90A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V FET Feature: - Power Dissipation (Max): 694W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	In Stock3,384
APTM50DAM38TG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 90A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V FET Feature: - Power Dissipation (Max): 694W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	In Stock7,254
APTM50SKM17G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 180A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 20mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	In Stock4,626
APTM50SKM19G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 163A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 163A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 22.5mOhm @ 81.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V FET Feature: - Power Dissipation (Max): 1136W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	In Stock5,976
APTM50SKM35TG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 99A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 99A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 39mOhm @ 49.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V FET Feature: - Power Dissipation (Max): 781W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	In Stock8,028
APTM50SKM38TG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 90A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V FET Feature: - Power Dissipation (Max): 694W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	In Stock6,606
APTM50UM09FAG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 497A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 497A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 248.5A, 10V Vgs(th) (Max) @ Id: 5V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 63300pF @ 25V FET Feature: - Power Dissipation (Max): 5000W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	In Stock4,302
APTM50UM13SAG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 335A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 335A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 167.5A, 10V Vgs(th) (Max) @ Id: 5V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 800nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 42200pF @ 25V FET Feature: - Power Dissipation (Max): 3290W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	In Stock4,122
APTM50UM19SG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 163A J3 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 163A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 19mOhm @ 81.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 492nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 22400pF @ 25V FET Feature: - Power Dissipation (Max): 1136W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	In Stock5,976
APTM50UM25SG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 149A J3 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 149A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 74.5A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 17500pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	In Stock7,146
APTML100U60R020T1AG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 20A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 720mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V FET Feature: - Power Dissipation (Max): 520W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock3,942
APTML10UM09R004T1AG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 154A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V FET Feature: - Power Dissipation (Max): 480W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock6,462
APTML20UM18R010T1AG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 200V 109A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 109A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 19mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 9880pF @ 25V FET Feature: - Power Dissipation (Max): 480W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock4,950
APTML50UM90R020T1AG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 52A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 108mOhm @ 26A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V FET Feature: - Power Dissipation (Max): 568W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock6,714
APTML60U12R020T1AG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 45A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 22.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V FET Feature: - Power Dissipation (Max): 568W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock6,156
ATP101-TL-H ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 25A ATPAK Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 13A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 10V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	In Stock5,976
ATP101-TL-HX ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH DPAK Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 13A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 18.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 875pF @ 10V FET Feature: - Power Dissipation (Max): 30W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	In Stock5,202
ATP101-V-TL-H ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 25A ATPAK Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	In Stock2,412
ATP102-TL-H ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 40A ATPAK Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1490pF @ 10V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	In Stock7,128
ATP103-TL-H ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 55A ATPAK Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 55A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 28A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2430pF @ 10V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	In Stock6,714
ATP104-TL-H ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 75A ATPAK Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.4mOhm @ 38A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 10V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	In Stock5,292
ATP104-TL-HX ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 30V 75A ATPAK Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 75A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.4mOhm @ 38A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 76nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 10V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	In Stock2,628
ATP106-TL-H ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 30A ATPAK Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 15A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 20V FET Feature: - Power Dissipation (Max): 40W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	In Stock7,704
ATP107-TL-H ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 50A ATPAK Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 50A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 20V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	In Stock6,804
ATP108-TL-H ON Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET P-CH 40V 70A ATPAK Manufacturer: ON Semiconductor Series: - FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 70A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 35A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 79.5nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 20V FET Feature: - Power Dissipation (Max): 60W (Tc) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: ATPAK Package / Case: ATPAK (2 leads+tab)	In Stock51,816

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