Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

APTM50UM13SAG

APTM50UM13SAG

For Reference Only

Part Number APTM50UM13SAG
PNEDA Part # APTM50UM13SAG
Description MOSFET N-CH 500V 335A SP6
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 4,122
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APTM50UM13SAG Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPTM50UM13SAG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • APTM50UM13SAG Datasheet
  • where to find APTM50UM13SAG
  • Microsemi

  • Microsemi APTM50UM13SAG
  • APTM50UM13SAG PDF Datasheet
  • APTM50UM13SAG Stock

  • APTM50UM13SAG Pinout
  • Datasheet APTM50UM13SAG
  • APTM50UM13SAG Supplier

  • Microsemi Distributor
  • APTM50UM13SAG Price
  • APTM50UM13SAG Distributor

APTM50UM13SAG Specifications

ManufacturerMicrosemi Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C335A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs15mOhm @ 167.5A, 10V
Vgs(th) (Max) @ Id5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs800nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds42200pF @ 25V
FET Feature-
Power Dissipation (Max)3290W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP6
Package / CaseSP6

The Products You May Be Interested In

APTC60DAM24CT1G

Microsemi

Manufacturer

Microsemi Corporation

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

95A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

24mOhm @ 47.5A, 10V

Vgs(th) (Max) @ Id

3.9V @ 5mA

Gate Charge (Qg) (Max) @ Vgs

300nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

14400pF @ 25V

FET Feature

-

Power Dissipation (Max)

462W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SP4

Package / Case

SP4

BVSS138LT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

CSD19534Q5AT

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

50A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

15.1mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

3.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1680pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.2W (Ta), 63W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-VSONP (5x6)

Package / Case

8-PowerTDFN

AUIRF540ZSTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

26.5mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1770pF @ 25V

FET Feature

-

Power Dissipation (Max)

92W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STU5N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II Plus

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

3.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 1.85A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.5nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

165pF @ 100V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Recently Sold

LM393DR

LM393DR

Rohm Semiconductor

IC COMPARATOR DUAL 0.8MA 8-SOIC

LIS35DE

LIS35DE

STMicroelectronics

ACCEL 2.3-9.2G I2C/SPI 14LGA

MAX9011EUT+T

MAX9011EUT+T

Maxim Integrated

IC COMPARATOR TTL SOT23-6

AK4458VN

AK4458VN

AKM Semiconductor Inc.

IC DAC/AUDIO 32BIT 768K 48QFN

MT25QU128ABA8ESF-0SIT

MT25QU128ABA8ESF-0SIT

Micron Technology Inc.

IC FLASH 128M SPI 133MHZ 16SOP2

DN2540N8-G

DN2540N8-G

Microchip Technology

MOSFET N-CH 400V 0.17A SOT89-3

MC68060RC50

MC68060RC50

NXP

IC MPU M680X0 50MHZ 206PGA

EVQ-PAC09K

EVQ-PAC09K

Panasonic Electronic Components

SWITCH TACTILE SPST-NO 0.02A 15V

BC848BLT3G

BC848BLT3G

ON Semiconductor

TRANS NPN 30V 0.1A SOT-23

AD8603AUJZ-REEL7

AD8603AUJZ-REEL7

Analog Devices

IC OPAMP GP 1 CIRCUIT TSOT5

S2B-13-F

S2B-13-F

Diodes Incorporated

DIODE GEN PURP 100V 1.5A SMB

SP3232EEN-L

SP3232EEN-L

MaxLinear, Inc.

IC TRANSCEIVER FULL 2/2 16SOIC