Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Transistors - Special Purpose (162)

Records 64,903

Page 1027/2164

Part Number	Description	In Stock
APTC60DAM24T1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 95A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V FET Feature: - Power Dissipation (Max): 462W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock8,010
APTC60DAM35T1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 72A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V FET Feature: - Power Dissipation (Max): 416W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock6,984
APTC60SKM24CT1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 95A SP1 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V FET Feature: Super Junction Power Dissipation (Max): 462W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock3,186
APTC60SKM24T1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 95A SP1 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 95A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 47.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V FET Feature: - Power Dissipation (Max): 462W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock5,184
APTC60SKM35T1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 72A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V FET Feature: - Power Dissipation (Max): 416W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock3,924
APTC80DA15T1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 28A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V FET Feature: - Power Dissipation (Max): 277W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock2,916
APTC80SK15T1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 28A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V FET Feature: - Power Dissipation (Max): 277W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock4,356
APTC90DAM60CT1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 59A SP1 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 462W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock2,124
APTC90DAM60T1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 59A SP1 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 462W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock6,156
APTC90SKM60CT1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 59A SP1 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 462W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock7,776
APTC90SKM60T1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 59A SP1 Manufacturer: Microsemi Corporation Series: CoolMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 462W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock5,706
APTM100DA18CT1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 40A SP1 Manufacturer: Microsemi Corporation Series: POWER MOS 8™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 216mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V FET Feature: - Power Dissipation (Max): 657W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock8,784
APTM100DA18T1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 40A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 216mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V FET Feature: - Power Dissipation (Max): 657W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock3,672
APTM100DA18TG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 43A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V FET Feature: - Power Dissipation (Max): 780W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	In Stock3,276
APTM100DA33T1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 23A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V FET Feature: - Power Dissipation (Max): 390W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock4,392
APTM100DA40T1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 20A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 480mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V FET Feature: - Power Dissipation (Max): 357W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock5,112
APTM100DAM90G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 78A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	In Stock3,060
APTM100SK18TG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 43A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V FET Feature: - Power Dissipation (Max): 780W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	In Stock5,382
APTM100SK33T1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 23A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V FET Feature: - Power Dissipation (Max): 390W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock4,698
APTM100SK40T1G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 20A SP1 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 480mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V FET Feature: - Power Dissipation (Max): 357W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1	In Stock4,284
APTM100SKM90G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 78A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	In Stock3,456
APTM100U13SG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 65A J3 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 145mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 2000nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 31600pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: Module Package / Case: J3 Module	In Stock8,784
APTM100UM45DAG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 215A SP6 Manufacturer: Microsemi Corporation Series: POWER MOS 7® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 215A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V Vgs(th) (Max) @ Id: 5V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 42700pF @ 25V FET Feature: - Power Dissipation (Max): 5000W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	In Stock7,974
APTM100UM45FAG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 215A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 215A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 52mOhm @ 107.5A, 10V Vgs(th) (Max) @ Id: 5V @ 30mA Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 42700pF @ 25V FET Feature: - Power Dissipation (Max): 5000W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	In Stock2,124
APTM100UM60FAG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 129A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 129A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 70mOhm @ 64.5A, 10V Vgs(th) (Max) @ Id: 5V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 1116nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 31100pF @ 25V FET Feature: - Power Dissipation (Max): 2272W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	In Stock8,100
APTM100UM65DAG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 145A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V Vgs(th) (Max) @ Id: 5V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 28500pF @ 25V FET Feature: - Power Dissipation (Max): 3250W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	In Stock5,868
APTM100UM65SAG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 145A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V Vgs(th) (Max) @ Id: 5V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 28500pF @ 25V FET Feature: - Power Dissipation (Max): 3250W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	In Stock5,130
APTM100UM65SCAVG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 1000V 145A SP6 Manufacturer: Microsemi Corporation Series: POWER MOS 7® FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 145A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 78mOhm @ 72.5A, 10V Vgs(th) (Max) @ Id: 5V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 28500pF @ 25V FET Feature: - Power Dissipation (Max): 3250W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: Module	In Stock8,190
APTM10DAM02G Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 495A SP6 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V Vgs(th) (Max) @ Id: 4V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V FET Feature: - Power Dissipation (Max): 1250W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6	In Stock2,970
APTM10DAM05TG Microsemi	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 278A SP4 Manufacturer: Microsemi Corporation Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 278A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V FET Feature: - Power Dissipation (Max): 780W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP4 Package / Case: SP4	In Stock6,840

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