Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

APTC60SKM24T1G

APTC60SKM24T1G

For Reference Only

Part Number APTC60SKM24T1G
PNEDA Part # APTC60SKM24T1G
Description MOSFET N-CH 600V 95A SP1
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 5,184
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 18 - Feb 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APTC60SKM24T1G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPTC60SKM24T1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • APTC60SKM24T1G Datasheet
  • where to find APTC60SKM24T1G
  • Microsemi

  • Microsemi APTC60SKM24T1G
  • APTC60SKM24T1G PDF Datasheet
  • APTC60SKM24T1G Stock

  • APTC60SKM24T1G Pinout
  • Datasheet APTC60SKM24T1G
  • APTC60SKM24T1G Supplier

  • Microsemi Distributor
  • APTC60SKM24T1G Price
  • APTC60SKM24T1G Distributor

APTC60SKM24T1G Specifications

ManufacturerMicrosemi Corporation
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs24mOhm @ 47.5A, 10V
Vgs(th) (Max) @ Id3.9V @ 5mA
Gate Charge (Qg) (Max) @ Vgs300nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14400pF @ 25V
FET Feature-
Power Dissipation (Max)462W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP1
Package / CaseSP1

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

55mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

9.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 30V

FET Feature

-

Power Dissipation (Max)

280mW (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-236AB (SOT23)

Package / Case

TO-236-3, SC-59, SOT-23-3

IPP80N06S2L-07

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

2V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

130nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3160pF @ 25V

FET Feature

-

Power Dissipation (Max)

210W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

R6030JNZ4C13

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Rds On (Max) @ Id, Vgs

143mOhm @ 15A, 15V

Vgs(th) (Max) @ Id

7V @ 5.5mA

Gate Charge (Qg) (Max) @ Vgs

74nC @ 15V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2500pF @ 100V

FET Feature

-

Power Dissipation (Max)

370W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247G

Package / Case

TO-247-3

Manufacturer

IXYS

Series

TrenchHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

130A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12mOhm @ 65A, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

113nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

9800pF @ 25V

FET Feature

-

Power Dissipation (Max)

750W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

RQ6C065BCTCR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V

Rds On (Max) @ Id, Vgs

21mOhm @ 6.5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

1520pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT6 (SC-95)

Package / Case

SC-95-6

Recently Sold

AD620ARZ

AD620ARZ

Analog Devices

IC INST AMP 1 CIRCUIT 8SOIC

AD8622ARZ

AD8622ARZ

Analog Devices

IC OPAMP VFB 2 CIRCUIT 8SOIC

JAN2N2222A

JAN2N2222A

Microsemi

TRANS NPN 50V 0.8A

L7905CV-DG

L7905CV-DG

STMicroelectronics

IC REG LINEAR -5V 1.5A TO220

ESDALC5-1BM2

ESDALC5-1BM2

STMicroelectronics

TVS DIODE 5V SOD882

1SS355TE-17

1SS355TE-17

Rohm Semiconductor

DIODE GEN PURP 80V 100MA UMD2

MAX9011EUT+T

MAX9011EUT+T

Maxim Integrated

IC COMPARATOR TTL SOT23-6

SMBJ36A

SMBJ36A

Bourns

TVS DIODE 36V 58.1V SMB

MMBT2222AT

MMBT2222AT

ON Semiconductor

TRANS NPN 40V 0.6A SOT523F

TN2404K-T1-E3

TN2404K-T1-E3

Vishay Siliconix

MOSFET N-CH 240V 200MA SOT23-3

STM32L452RET6

STM32L452RET6

STMicroelectronics

IC MCU 32BIT 512KB FLASH 64LQFP

MAX3076EESD+

MAX3076EESD+

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC