Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
Transistors - Bipolar (BJT) - RF (1,506)
Transistors - Bipolar (BJT) - Single (13,715)
Transistors - Bipolar (BJT) - Single, Pre-Biased (3,282)
Transistors - FETs, MOSFETs - Arrays (3,829)
Transistors - FETs, MOSFETs - RF (3,043)
Transistors - FETs, MOSFETs - Single (29,970)
Transistors - IGBTs - Arrays (18)
Transistors - IGBTs - Modules (2,367)
Transistors - IGBTs - Single (3,305)
Transistors - JFETs (664)
Transistors - Programmable Unijunction (26)
Transistors - Special Purpose (162)

Records 64,903

Page 1014/2164

Part Number	Description	In Stock
AOW296 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 100V 70A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: AlphaSGT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2785pF @ 50V FET Feature: - Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock4,932
AOW298 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 9A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 50V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 100W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock2,358
AOW29S50 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 29A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 150mOhm @ 14.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1312pF @ 100V FET Feature: - Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock3,454
AOW410 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: * FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock8,532
AOW418 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 9.5A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: SDMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 50V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock4,158
AOW480 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 15A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: SDMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 7820pF @ 40V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 333W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock3,510
AOW482 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 11A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: SDMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Rds On (Max) @ Id, Vgs: 7.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V Vgs (Max): ±25V Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 40V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock3,474
AOW4S60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 263pF @ 100V FET Feature: - Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock2,232
AOW66616 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single 60V N-CHANNEL ALPHASGT TM Manufacturer: Alpha & Omega Semiconductor Inc. Series: AlphaSGT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 30V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 125W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock17,748
AOW7S60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 100V FET Feature: - Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock8,694
AOW7S65 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 7A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 434pF @ 100V FET Feature: - Power Dissipation (Max): 104W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock8,262
AOWF10N60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262F Package / Case: TO-262-3 Full Pack, I²Pak	In Stock8,010
AOWF10N65 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 10A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 25V FET Feature: - Power Dissipation (Max): 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Full Pack, I²Pak	In Stock5,382
AOWF10T60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1346pF @ 100V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262F Package / Case: TO-262-3 Full Pack, I²Pak	In Stock3,942
AOWF10T60P Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A TO-262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 100V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262F Package / Case: TO-262-3 Full Pack, I²Pak	In Stock7,974
AOWF11C60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A TO-262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 100V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262F Package / Case: TO-262-3 Full Pack, I²Pak	In Stock8,442
AOWF11N60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V FET Feature: - Power Dissipation (Max): 27.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262F Package / Case: TO-262-3 Full Pack, I²Pak	In Stock2,502
AOWF11N70 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V 11A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 870mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Full Pack, I²Pak	In Stock8,280
AOWF11S60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Full Pack, I²Pak	In Stock3,024
AOWF11S65 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 11A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 100V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Full Pack, I²Pak	In Stock4,896
AOWF12N50 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1633pF @ 25V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Full Pack, I²Pak	In Stock7,956
AOWF12N60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 12A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Full Pack, I²Pak	In Stock2,826
AOWF12N65 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 12A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Full Pack, I²Pak	In Stock6,876
AOWF12T60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 12A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1954pF @ 100V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262F Package / Case: TO-262-3 Full Pack, I²Pak	In Stock2,484
AOWF12T60P Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 12A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2028pF @ 100V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262F Package / Case: TO-262-3 Full Pack, I²Pak	In Stock22,860
AOWF14N50 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 14A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Full Pack, I²Pak	In Stock5,562
AOWF15S60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 15A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 717pF @ 100V FET Feature: - Power Dissipation (Max): 27.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Full Pack, I²Pak	In Stock3,240
AOWF15S65 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 15A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 841pF @ 100V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Full Pack, I²Pak	In Stock5,868
AOWF20S60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1038pF @ 100V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Full Pack, I²Pak	In Stock7,722
AOWF240 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 40V 21A TO262F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3510pF @ 20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 33.3W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: - Package / Case: TO-262-3 Full Pack, I²Pak	In Stock6,156

«
‹
1
...
1011
1012
1013
1014 (current)
1015
1016
1017
...
2164
›
»

Send Message

Certifications

Transistors

Resources

Support

Social Media

Need Help?
Send Message