Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
Transistors - Bipolar (BJT) - Arrays, Pre-Biased (1,584)
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Transistors - Bipolar (BJT) - Single (13,715)
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Transistors - FETs, MOSFETs - Arrays (3,829)
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Records 64,903

Page 1013/2164

Part Number	Description	In Stock
AOU4S60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4A TO251 Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 263pF @ 100V FET Feature: - Power Dissipation (Max): 56.8W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock8,874
AOU7S60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A TO251 Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 100V FET Feature: - Power Dissipation (Max): 83W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock2,880
AOU7S65 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A TO251 Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 434pF @ 100V FET Feature: - Power Dissipation (Max): 89W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock4,680
AOUS66616 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single 60V N-CHANNEL ALPHASGT TM Manufacturer: Alpha & Omega Semiconductor Inc. Series: AlphaSGT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 92A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 30V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 92.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UltraSO-8™ Package / Case: 3-PowerSMD, Flat Leads	In Stock2,034
AOUS66923 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single 100V N-CHANNEL ALPHASGT TM Manufacturer: Alpha & Omega Semiconductor Inc. Series: AlphaSGT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 1725pF @ 50V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 73W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: UltraSO-8™ Package / Case: 3-PowerSMD, Flat Leads	In Stock3,942
AOV11S60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.65A 5-DFN Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 650mA (Ta), 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 500mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 156W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-DFN-EP (8x8) Package / Case: 4-PowerTSFN	In Stock5,796
AOV15S60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 0.52A 5-DFN Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 520mA (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 717pF @ 100V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-DFN-EP (8x8) Package / Case: 4-PowerTSFN	In Stock3,456
AOV20S60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 18A 5DFB Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 18A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1038pF @ 100V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-DFN-EP (8x8) Package / Case: 4-PowerTSFN	In Stock6,264
AOW10N60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock8,406
AOW10N65 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 10A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1645pF @ 25V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock2,340
AOW10T60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 10A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1346pF @ 100V FET Feature: - Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock7,182
AOW10T60P Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 10A 5DFB Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1595pF @ 100V FET Feature: - Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock7,200
AOW11N60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V FET Feature: - Power Dissipation (Max): 272W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock17,892
AOW11S60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 11A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 545pF @ 100V FET Feature: - Power Dissipation (Max): 178W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock7,200
AOW11S65 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 11A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 646pF @ 100V FET Feature: - Power Dissipation (Max): 198W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock6,066
AOW12N50 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 12A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1633pF @ 25V FET Feature: - Power Dissipation (Max): 250W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock3,726
AOW12N60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 12A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V FET Feature: - Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock7,560
AOW12N65 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 12A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2150pF @ 25V FET Feature: - Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock5,418
AOW14N50 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 14A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2297pF @ 25V FET Feature: - Power Dissipation (Max): 278W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock3,942
AOW15S60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 15A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 3.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 717pF @ 100V FET Feature: - Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock7,236
AOW15S65 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 15A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 841pF @ 100V FET Feature: - Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock7,974
AOW20C60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 74nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 3440pF @ 100V FET Feature: - Power Dissipation (Max): 463W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock7,344
AOW20S60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 20A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19.8nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1038pF @ 100V FET Feature: - Power Dissipation (Max): 266W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock7,110
AOW2500 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 150V 152A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 152A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6460pF @ 75V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 375W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock2,880
AOW2502 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET NCH 150V 106A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 106A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3010pF @ 75V FET Feature: - Power Dissipation (Max): 6.2W (Ta), 277W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock7,254
AOW25S65 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 25A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1278pF @ 100V FET Feature: - Power Dissipation (Max): 357W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock8,352
AOW284 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 80V 15A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: AlphaMOS FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 5154pF @ 40V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 250W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock4,374
AOW290 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET NCH 100V 140A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 140A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 7180pF @ 50V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 500W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock6,480
AOW2918 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 100V 13A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 3430pF @ 50V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 267W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock7,974
AOW292 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET NCH 100V 105A TO262 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 3.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6775pF @ 50V FET Feature: - Power Dissipation (Max): 1.9W (Ta), 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-262 Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA	In Stock2,466

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