Transistors

Transistors - Bipolar (BJT) - Arrays (1,432)
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Records 64,903

Page 1012/2164

Part Number	Description	In Stock
AOTF7N65 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 7A TO220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.56Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1060pF @ 25V FET Feature: - Power Dissipation (Max): 38.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock2,016
AOTF7N70 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V 7A TO220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.8Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1175pF @ 25V FET Feature: - Power Dissipation (Max): 38.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock7,164
AOTF7S60L Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A TO220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 372pF @ 100V FET Feature: - Power Dissipation (Max): 34W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock3,582
AOTF7S65 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 7A TO220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: aMOS™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 434pF @ 100V FET Feature: - Power Dissipation (Max): 35W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock7,308
AOTF7T60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 7A TO220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 962pF @ 100V FET Feature: - Power Dissipation (Max): 38W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	In Stock7,452
AOTF7T60L Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CHANNEL 600V 7A TO220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 962pF @ 100V FET Feature: - Power Dissipation (Max): 29W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	In Stock2,412
AOTF7T60P Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A TO220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 965pF @ 100V FET Feature: - Power Dissipation (Max): 38W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock4,104
AOTF7T60PL Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 7A TO-220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1Ohm @ 3.5A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 965pF @ 100V FET Feature: - Power Dissipation (Max): 29W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock20,172
AOTF8N50 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 8A TO220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1042pF @ 25V FET Feature: - Power Dissipation (Max): 38.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock4,806
AOTF8N50_002 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,722
AOTF8N50_003 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock5,814
AOTF8N60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 8A TO220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock6,894
AOTF8N65 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 650V 8A TO220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.15Ohm @ 4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock8,388
AOTF8N65_002 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH TO220 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Vgs (Max): - Input Capacitance (Ciss) (Max) @ Vds: - FET Feature: - Power Dissipation (Max): - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	In Stock7,542
AOTF8N80 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 800V 7.4A TO220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.63Ohm @ 4A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock4,464
AOTF8T50P Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 810mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 100V FET Feature: - Power Dissipation (Max): 38W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock3,690
AOTF8T50P_001 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V TO220 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 810mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 100V FET Feature: - Power Dissipation (Max): 38W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	In Stock3,582
AOTF8T50PL Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 30V TO220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 810mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 905pF @ 100V FET Feature: - Power Dissipation (Max): 28W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220F Package / Case: TO-220-3 Full Pack	In Stock2,520
AOTF9N50 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 9A TO220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1042pF @ 25V FET Feature: - Power Dissipation (Max): 38.5W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock3,454
AOTF9N70 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 700V 9A TO220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock7,182
AOTF9N90 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 900V 9A TO220F Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 25V FET Feature: - Power Dissipation (Max): 50W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3F Package / Case: TO-220-3 Full Pack	In Stock3,204
AOTL66401 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single 40V N-CHANNEL ALPHASGT TM Manufacturer: Alpha & Omega Semiconductor Inc. Series: AlphaSGT™ FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 400A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 0.7mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 340nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 19180pF @ 20V FET Feature: - Power Dissipation (Max): 8.3W (Ta), 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: TOLLA Package / Case: 8-PowerSFN	In Stock5,976
AOU1N60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 1.3A TO251 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9Ohm @ 650mA, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V FET Feature: - Power Dissipation (Max): 45W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock8,028
AOU2N60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2A TO251 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V FET Feature: - Power Dissipation (Max): 56.8W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock3,598
AOU2N60_001 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2A TO251 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 25V FET Feature: - Power Dissipation (Max): 56.8W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock4,860
AOU2N60A Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 25V FET Feature: - Power Dissipation (Max): 57W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock2,592
AOU3N50 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 500V 2.8A IPAK Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 331pF @ 25V FET Feature: - Power Dissipation (Max): 57W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock27,522
AOU3N60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2.5A IPAK Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V FET Feature: - Power Dissipation (Max): 56.8W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock3,798
AOU3N60_001 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 2.5A IPAK Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.25A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V FET Feature: - Power Dissipation (Max): 56.8W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock8,892
AOU4N60 Alpha & Omega Semiconductor	Transistors - FETs, MOSFETs - Single MOSFET N-CH 600V 4A TO251 Manufacturer: Alpha & Omega Semiconductor Inc. Series: - FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V FET Feature: - Power Dissipation (Max): 104W (Tc) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251-3 Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	In Stock22,980

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