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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 128/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
TSPB5H150S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 5A SMPC4.0
16,464
-
Schottky
150V
5A
840mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
ES3DB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AA
49,296
-
Standard
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
46pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES3HB R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 3A DO214AA
32,214
-
Standard
500V
3A
1.45V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
34pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
TPUH6J S1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 6A TO277A
51,768
-
Standard
600V
6A
3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
10µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
TPAU3J S1G
Taiwan Semiconductor Corporation
DIODE AVALANCHE 600V 3A TO277A
31,662
-
Avalanche
600V
3A
1.88V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
TPAR3J S1G
Taiwan Semiconductor Corporation
DIODE AVALANCHE 600V 3A TO277A
15,066
-
Avalanche
600V
3A
1.55V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
10µA @ 600V
58pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
TPAU3G S1G
Taiwan Semiconductor Corporation
DIODE AVALANCHE 400V 3A TO277A
17,772
-
Avalanche
400V
3A
1.88V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 400V
60pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
TPAR3D S1G
Taiwan Semiconductor Corporation
DIODE AVALANCHE 200V 3A TO277A
17,526
-
Avalanche
200V
3A
1.55V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
10µA @ 200V
58pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SB10-05P-TD-E
ON Semiconductor
DIODE SCHOTTKY 50V 1A PCP
22,812
-
Schottky
50V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
10ns
80µA @ 25V
52pF @ 10V, 1MHz
Surface Mount
TO-243AA
SOT-89/PCP-1
-55°C ~ 125°C
MUR320SBHR5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AA
22,752
-
Standard
200V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
AS3PG-M3/86A
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 400V 2.1A TO277A
26,868
eSMP®
Avalanche
400V
2.1A (DC)
920mV @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
1.2µs
10µA @ 400V
37pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SJPL-L4VR
Sanken
DIODE GEN PURP 400V 3A SJP
54,672
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
50µA @ 400V
-
Surface Mount
2-SMD, J-Lead
SJP
-40°C ~ 150°C
STTH3BCF060U
STMicroelectronics
DIODE GEN PURP 600V 3A SMB
21,972
-
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
3µA @ 600V
-
Surface Mount
DO-214AA, SMB
SMB
175°C (Max)
SJPL-F4VR
Sanken
DIODE GEN PURP 400V 1.5A SJP
46,986
-
Standard
400V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Surface Mount
2-SMD, J-Lead
SJP
-40°C ~ 150°C
SE10DJ-M3/I
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 3A TO263AC
34,476
Automotive, AEC-Q101, eSMP®
Standard
600V
3A
1.15V @ 10A
Standard Recovery >500ns, > 200mA (Io)
3µs
15µA @ 600V
67pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab) Variant
TO-263AC (SMPD)
-55°C ~ 175°C
STTH302RL
STMicroelectronics
DIODE GEN PURP 200V 3A DO201AD
33,714
-
Standard
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
3µA @ 200V
-
Through Hole
DO-201AD, Axial
DO-201AD
175°C (Max)
SE10DBHM3/I
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 3A TO263AC
21,804
Automotive, AEC-Q101, eSMP®
Standard
100V
3A (DC)
1.15V @ 10A
Standard Recovery >500ns, > 200mA (Io)
3000ns
15µA @ 100V
67pF @ 4V, 1MHz
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab) Variant
TO-263AC (SMPD)
-55°C ~ 175°C
SDURB1040TR
SMC Diode Solutions
DIODE GEN PURP 400V D2PAK
22,986
-
Standard
400V
-
1.2V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
10µA @ 400V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
BYW82-TR
Vishay Semiconductor Diodes Division
DIODE AVALANCHE 200V 3A SOD64
54,870
-
Avalanche
200V
3A
1V @ 3A
Standard Recovery >500ns, > 200mA (Io)
7.5µs
1µA @ 200V
60pF @ 4V, 1MHz
Through Hole
SOD-64, Axial
SOD-64
-55°C ~ 175°C
SDURB1060TR
SMC Diode Solutions
DIODE GEN PURP 600V D2PAK
13,704
-
Standard
600V
-
2.2V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
32ns
10µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
TSP15U50S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 15A TO277A
60,954
-
Schottky
50V
15A
560mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 50V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
TSPB15U45S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 15A SMPC4.0
14,268
-
Schottky
45V
15A
560mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 45V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
TSPB15U50S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 15A SMPC4.0
14,148
-
Schottky
50V
15A
560mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 50V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
ST2045AXTR
SMC Diode Solutions
DIODE SCHOTTKY 45V R-6
30,948
-
Schottky
45V
-
580mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.2mA @ 45V
-
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
TSPB15U100S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 15A SMPC4.0
51,498
-
Schottky
100V
15A
700mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
250µA @ 100V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
V20DL45HM3_A/I
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 45V 20A TO263AC
23,712
Automotive, AEC-Q101, eSMP®, TMBS®
Schottky
45V
20A
640mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
2.5mA @ 45V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab) Variant
TO-263AC (SMPD)
-40°C ~ 150°C
TSPB10U45S S1G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 45V 10A SMPC4.0
16,026
-
Schottky
45V
10A
460mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 45V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
RFN10BM3STL
Rohm Semiconductor
DIODE GEN PURP 350V 10A TO252
21,276
-
Standard
350V
10A
1.5V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 350V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252
150°C (Max)
VBT1045BP-E3/8W
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 45V 10A TO263AB
25,080
TMBS®
Schottky
45V
10A (DC)
680mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB
200°C (Max)
MBR1660
SMC Diode Solutions
DIODE SCHOTTKY 60V TO220AC
71,292
-
Schottky
60V
-
750mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 60V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C