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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 131/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
1N3892
GeneSiC Semiconductor
DIODE GEN PURP 400V 12A DO4
92
-
Standard
400V
12A
1.4V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
25µA @ 50V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
1N3889R
GeneSiC Semiconductor
DIODE GEN PURP REV 50V 12A DO4
15,732
-
Standard, Reverse Polarity
50V
12A
1.4V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
25µA @ 50V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
1N3892R
GeneSiC Semiconductor
DIODE GEN PURP REV 400V 12A DO4
19,560
-
Standard, Reverse Polarity
400V
12A
1.4V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
25µA @ 50V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
1N5618US
Microsemi
DIODE GEN PURP 600V 1A D5A
9,720
-
Standard
600V
1A
1.3V @ 3A
Standard Recovery >500ns, > 200mA (Io)
2µs
500nA @ 600V
-
Surface Mount
SQ-MELF, A
D-5A
-65°C ~ 200°C
VS-40HF100
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 40A DO203AB
8,982
-
Standard
1000V
40A
1.3V @ 125A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 1000V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-65°C ~ 190°C
1N5807
Microsemi
DIODE GEN PURP 50V 3A AXIAL
8,226
-
Standard
50V
3A
875mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
5µA @ 50V
60pF @ 10V, 1MHz
Through Hole
B, Axial
-
-65°C ~ 175°C
STPSC20H12D
STMicroelectronics
DIODE SCHOTTKY 1.2KV 20A TO220AC
7,169
-
Silicon Carbide Schottky
1200V
20A
1.5V @ 20A
No Recovery Time > 500mA (Io)
0ns
120µA @ 1200V
1650pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
STPSC20H12DY
STMicroelectronics
DIODE SCHOTTKY 1.2KV 20A TO220AC
2,068
Automotive, AEC-Q101, ECOPACK®2
Silicon Carbide Schottky
1200V
20A
1.5V @ 20A
No Recovery Time > 500mA (Io)
0ns
120µA @ 1200V
1650pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
SCS210KGHRC
Rohm Semiconductor
DIODE SCHOTTKY 1200V 10A TO220-2
19,044
Automotive, AEC-Q101
Silicon Carbide Schottky
1200V
10A (DC)
1.6V @ 10A
No Recovery Time > 500mA (Io)
0ns
200µA @ 1200V
550pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
175°C (Max)
VS-40EPF06-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 40A TO247AC
10,596
-
Standard
600V
40A
1.25V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
180ns
100µA @ 600V
-
Through Hole
TO-247-2
TO-247AC Modified
-40°C ~ 150°C
1N2130AR
GeneSiC Semiconductor
DIODE GEN PURP REV 150V 60A DO5
6,348
-
Standard, Reverse Polarity
150V
60A
1.1V @ 60A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 200°C
1N2138AR
GeneSiC Semiconductor
DIODE GEN PURP REV 600V 60A DO5
6,180
-
Standard, Reverse Polarity
600V
60A
1.1V @ 60A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 200°C
1N5554US
Microsemi
DIODE GEN PURP 1KV 3A B-MELF
9,792
-
Standard
1000V
3A
1.2V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
1µA @ 1000V
-
Surface Mount
SQ-MELF, B
B, SQ-MELF
-65°C ~ 175°C
1N3768R
GeneSiC Semiconductor
DIODE GEN PURP REV 1KV 35A DO5
8,550
-
Standard, Reverse Polarity
1000V
35A
1.2V @ 35A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 190°C
SCS112AGC
Rohm Semiconductor
DIODE SCHOTTKY 600V 12A TO220AC
20,496
-
Silicon Carbide Schottky
600V
12A
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
240µA @ 600V
516pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
175°C (Max)
FR20GR02
GeneSiC Semiconductor
DIODE GEN PURP REV 400V 20A DO5
6,432
-
Standard, Reverse Polarity
400V
20A
1V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
25µA @ 50V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-40°C ~ 125°C
SCS210KE2C
Rohm Semiconductor
DIODE SCHOTTKY 1200V 10A TO247
473
-
Silicon Carbide Schottky
1200V
10A (DC)
-
No Recovery Time > 500mA (Io)
0ns
-
-
Through Hole
TO-247-3
TO-247
175°C (Max)
VS-HFA30PB120-N3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.2KV 30A TO247AC
10
Automotive, AEC-Q101
Standard
1200V
30A
4.1V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
170ns
40µA @ 1200V
-
Through Hole
TO-247-2
TO-247AC Modified
-55°C ~ 150°C
VS-60APF12-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.2KV 60A TO247AC
18,660
-
Standard
1200V
60A
1.4V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
480ns
100µA @ 1200V
-
Through Hole
TO-247-3
TO-247AC
-40°C ~ 150°C
SCS215KGHRC
Rohm Semiconductor
DIODE SCHOTTKY 1200V 15A TO220-2
22,404
Automotive, AEC-Q101
Silicon Carbide Schottky
1200V
15A (DC)
1.6V @ 15A
No Recovery Time > 500mA (Io)
0ns
300µA @ 1200V
790pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
175°C (Max)
S85YR
GeneSiC Semiconductor
DIODE GEN PURP REV 1.6KV 85A DO5
6,840
-
Standard, Reverse Polarity
1600V
85A
1.1V @ 85A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 100V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-65°C ~ 150°C
VS-85HFL60S05
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 85A DO203AB
6,612
-
Standard
600V
85A
1.75V @ 266.9A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
100µA @ 600V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-40°C ~ 125°C
FR40MR05
GeneSiC Semiconductor
DIODE GEN PURP REV 1KV 40A DO5
6,924
-
Standard, Reverse Polarity
1000V
40A
1V @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
25µA @ 100V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-40°C ~ 125°C
SCS120AGC
Rohm Semiconductor
DIODE SCHOTTKY 600V 20A TO220AC
12,918
-
Silicon Carbide Schottky
600V
20A
1.7V @ 20A
No Recovery Time > 500mA (Io)
0ns
400µA @ 600V
860pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
175°C (Max)
1N6628US
Microsemi
DIODE GEN PURP 660V 1.75A A-MELF
6,492
-
Standard
660V
1.75A
1.35V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 660V
40pF @ 10V, 1MHz
Surface Mount
SQ-MELF, A
A-MELF
-65°C ~ 150°C
FR85G02
GeneSiC Semiconductor
DIODE GEN PURP 400V 85A DO5
7,860
-
Standard
400V
85A
1.4V @ 85A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
25µA @ 100V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-5
-40°C ~ 125°C
GB02SHT03-46
GeneSiC Semiconductor
DIODE SCHOTTKY 300V 4A
7,440
-
Silicon Carbide Schottky
300V
4A (DC)
1.6V @ 1A
No Recovery Time > 500mA (Io)
0ns
5µA @ 300V
76pF @ 1V, 1MHz
Through Hole
TO-206AB, TO-46-3 Metal Can
TO-46
-55°C ~ 225°C
1N4148-T50A
ON Semiconductor
DIODE GEN PURP 100V 200MA DO35
252,972
-
Standard
100V
200mA
1V @ 10mA
Small Signal =< 200mA (Io), Any Speed
4ns
5µA @ 75V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
BAS20LT3G
ON Semiconductor
DIODE GEN PURP 200V 200MA SOT23
180,084
-
Standard
200V
200mA (DC)
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 150V
5pF @ 0V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
-55°C ~ 150°C
BAS21HT3G
ON Semiconductor
DIODE GEN PURP 250V 200MA SOD323
239,178
-
Standard
250V
200mA (DC)
1.25V @ 200mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 200V
5pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 150°C