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SE10DBHM3/I

SE10DBHM3/I

For Reference Only

Part Number SE10DBHM3/I
PNEDA Part # SE10DBHM3-I
Description DIODE GEN PURP 100V 3A TO263AC
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 21,804
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SE10DBHM3/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberSE10DBHM3/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
SE10DBHM3/I, SE10DBHM3/I Datasheet (Total Pages: 5, Size: 108.8 KB)
PDFSE10DJHM3/I Datasheet Cover
SE10DJHM3/I Datasheet Page 2 SE10DJHM3/I Datasheet Page 3 SE10DJHM3/I Datasheet Page 4 SE10DJHM3/I Datasheet Page 5

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SE10DBHM3/I Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101, eSMP®
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)3A (DC)
Voltage - Forward (Vf) (Max) @ If1.15V @ 10A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)3000ns
Current - Reverse Leakage @ Vr15µA @ 100V
Capacitance @ Vr, F67pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab) Variant
Supplier Device PackageTO-263AC (SMPD)
Operating Temperature - Junction-55°C ~ 175°C

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Series

Automotive, AEC-Q101

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

150V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

920mV @ 1A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

25ns

Current - Reverse Leakage @ Vr

5µA @ 150V

Capacitance @ Vr, F

10pF @ 4V, 1MHz

Mounting Type

Surface Mount

Package / Case

DO-214AC, SMA

Supplier Device Package

DO-214AC (SMA)

Operating Temperature - Junction

-55°C ~ 150°C

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Nexperia

Manufacturer

Nexperia USA Inc.

Series

Automotive, AEC-Q101

Diode Type

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Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

570mV @ 1A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

50µA @ 40V

Capacitance @ Vr, F

69pF @ 1V, 1MHz

Mounting Type

Surface Mount

Package / Case

SOD-123

Supplier Device Package

SOD-123

Operating Temperature - Junction

150°C (Max)

VS-10ETF12STRRPBF

Vishay Semiconductor Diodes Division

Manufacturer

Vishay Semiconductor Diodes Division

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

1200V

Current - Average Rectified (Io)

10A

Voltage - Forward (Vf) (Max) @ If

1.33V @ 10A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

310ns

Current - Reverse Leakage @ Vr

100µA @ 1200V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB (D²PAK)

Operating Temperature - Junction

-40°C ~ 150°C

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Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

Automotive, AEC-Q101

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

60V

Current - Average Rectified (Io)

5A

Voltage - Forward (Vf) (Max) @ If

750mV @ 5A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

500µA @ 60V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

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Supplier Device Package

DO-214AB (SMC)

Operating Temperature - Junction

-55°C ~ 150°C

1N5392G R0G

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

1.5A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1.5A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

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Capacitance @ Vr, F

15pF @ 4V, 1MHz

Mounting Type

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Package / Case

DO-204AC, DO-15, Axial

Supplier Device Package

DO-204AC (DO-15)

Operating Temperature - Junction

-55°C ~ 150°C

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