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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single

Records 34,936

Page 121/1165

Part Number	Manufacturer	Description	In Stock	Series	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
S15JLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A SOD123W	27,972	-	Standard	600V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S15KLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A SOD123W	25,308	-	Standard	800V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S15MLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.5A SOD123W	28,596	-	Standard	1000V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RS1BL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 800MA SUBSMA	203,964	-	Standard	100V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1DL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 800MA SUBSMA	214,374	-	Standard	200V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1GL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 800MA SUBSMA	191,850	-	Standard	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1AL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 800MA SUB SMA	93,888	-	Standard	50V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1JL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 800MA SUBSMA	89,964	-	Standard	600V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFDL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 500MA SUBSMA	83,826	-	Standard	200V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFAL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 500MA SUB SMA	28,620	-	Standard	50V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFBL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 500MA SUBSMA	26,604	-	Standard	100V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1A R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	16,680	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 50V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1D R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	15,210	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1DL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	21,810	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1J R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	111,246	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1G R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	19,056	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
RSFGL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 500MA SUBSMA	172,128	-	Standard	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
V1PM12HM3/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 1A MICROSMP	100,146	Automotive, AEC-Q101, eSMP®	Schottky	120V	1A	870mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 120V	100pF @ 4V, 1MHz	Surface Mount	DO-219AD	MicroSMP (DO-219AD)	-40°C ~ 175°C
V1PM15HM3/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 150V 1A MICROSMP	93,432	Automotive, AEC-Q101, eSMP®	Schottky	150V	1A	1.21V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	65pF @ 4V, 1MHz	Surface Mount	DO-219AD	MicroSMP (DO-219AD)	-40°C ~ 175°C
RS1DLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W	22,458	-	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RS1MLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A SOD123W	23,844	-	Standard	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 1000V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RS1KLS RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.2A SOD123	218,226	-	Standard	800V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 800V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
RS1MLS RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.2A SOD123HE	22,560	-	Standard	1000V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 1000V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
RS1MLSHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.2A SOD123HE	28,026	-	Standard	1000V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 1000V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SS13LSHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SOD123HE	103,944	-	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 125°C
SS14LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SOD123HE	53,940	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SS16LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SOD123HE	24,744	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SS16LSHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SOD123HE	26,394	-	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SS14LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SOD123W	79,548	-	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
V2PL45-M3/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 2A MICROSMP	81,618	eSMP®	Schottky	45V	2A	560mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	350µA @ 45V	300pF @ 4V, 1MHz	Surface Mount	DO-219AD	MicroSMP (DO-219AD)	-40°C ~ 150°C

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