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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 118/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
1N4938-1
Microsemi
DIODE GEN PURP 175V 100MA DO35
7,260
-
Standard
175V
100mA
1V @ 100mA
Small Signal =< 200mA (Io), Any Speed
50ns
100nA @ 175V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
STPSC12065DY
STMicroelectronics
DIODE SCHTKY 650V 12A TO220AC
7,405
Automotive, AEC-Q101, ECOPACK®2
Silicon Carbide Schottky
650V
12A
1.45V @ 12A
No Recovery Time > 500mA (Io)
0ns
50µA @ 600V
750pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
APT75DQ60BG
Microsemi
DIODE GEN PURP 600V 75A TO247
14,460
-
Standard
600V
75A
2.5V @ 75A
Fast Recovery =< 500ns, > 200mA (Io)
31ns
25µA @ 600V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
VS-60APH03-N3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 300V 60A TO247AC
7,020
FRED Pt®
Standard
300V
60A
1.45V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
42ns
10µA @ 300V
-
Through Hole
TO-247-3
TO-247AC
-55°C ~ 175°C
STTH3010PI
STMicroelectronics
DIODE GEN PURP 1KV 30A DOP3I
7,320
-
Standard
1000V
30A
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
15µA @ 1000V
-
Through Hole
DOP3I-2 Insulated (Straight Leads)
DOP3I
175°C (Max)
STTH3010W
STMicroelectronics
DIODE GEN PURP 1KV 30A DO247
15,420
-
Standard
1000V
30A
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
15µA @ 1000V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
175°C (Max)
SCS310APC9
Rohm Semiconductor
DIODE SC SCHKY 650V 10A TO220ACP
9,600
-
Silicon Carbide Schottky
650V
10A (DC)
1.5V @ 10A
No Recovery Time > 500mA (Io)
0ns
50µA @ 650V
500pF @ 1V, 1MHz
Through Hole
TO-220-2
-
175°C (Max)
VS-1N1200A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 12A DO203AA
7,692
-
Standard
100V
12A
1.35V @ 12A
Standard Recovery >500ns, > 200mA (Io)
-
2.5mA @ 100V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-65°C ~ 200°C
VS-1N1201A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 12A DO203AA
6,516
-
Standard
150V
12A
1.35V @ 12A
Standard Recovery >500ns, > 200mA (Io)
-
2.25mA @ 150V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-65°C ~ 200°C
STTH1512PI
STMicroelectronics
DIODE GEN PURP 1.2KV 15A DOP3I
16,344
-
Standard
1200V
15A
2.1V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
105ns
15µA @ 1200V
-
Through Hole
DOP3I-2 Insulated (Straight Leads)
DOP3I
175°C (Max)
VS-HFA15PB60PBF
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 15A TO247AC
96
HEXFRED®
Standard
600V
15A
1.7V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 600V
-
Through Hole
TO-247-2
TO-247AC Modified
-55°C ~ 150°C
IDW10G65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 10A TO247-3
252
CoolSiC™+
Silicon Carbide Schottky
650V
10A (DC)
1.7V @ 10A
No Recovery Time > 500mA (Io)
0ns
180µA @ 650V
300pF @ 1V, 1MHz
Through Hole
TO-247-3
PG-TO247-3
-55°C ~ 175°C
VS-80EBU02
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 80A POWIRTAB
8,544
FRED Pt®
Standard
200V
80A
1.13V @ 80A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 200V
-
Through Hole
PowerTab™, PowIRtab™
PowIRtab™
-
STTH3010WY
STMicroelectronics
DIODE GEN PURP 1KV 30A DO247-2
8,172
Automotive, AEC-Q101
Standard
1000V
30A
2V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
15µA @ 1000V
-
Through Hole
DO-247-2 (Straight Leads)
-
-40°C ~ 175°C
SCS212AMC
Rohm Semiconductor
DIODE SCHOTTKY 650V 12A TO220FM
19,188
-
Silicon Carbide Schottky
650V
12A
1.55V @ 12A
No Recovery Time > 500mA (Io)
0ns
240µA @ 600V
438pF @ 1V, 1MHz
Through Hole
TO-220-2 Full Pack
TO-220FM
175°C (Max)
VS-25F60
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 25A DO203AA
239
-
Standard
600V
25A
1.3V @ 78A
Standard Recovery >500ns, > 200mA (Io)
-
12mA @ 600V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-65°C ~ 175°C
C3D10065I
Cree/Wolfspeed
DIODE SCHOTTKY 650V 10A TO220-2
17,886
Z-Rec®
Silicon Carbide Schottky
650V
19A (DC)
-
No Recovery Time > 500mA (Io)
0ns
50µA @ 650V
480pF @ 0V, 1MHz
Through Hole
TO-220-2 Isolated Tab
TO-220-2 Isolated Tab
-55°C ~ 175°C
STTH6006W
STMicroelectronics
DIODE GEN PURP 600V 60A DO247
15,444
-
Standard
600V
60A
1.85V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
85ns
50µA @ 600V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
175°C (Max)
VS-HFA06PB120-N3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.2KV 6A TO247AC
234
HEXFRED®
Standard
1200V
6A
3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
5µA @ 1200V
-
Through Hole
TO-247-2
TO-247AC Modified
-55°C ~ 150°C
VS-1N1206RA
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 12A DO203AA
8,724
-
Standard, Reverse Polarity
600V
12A
1.35V @ 12A
Standard Recovery >500ns, > 200mA (Io)
-
1mA @ 600V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-65°C ~ 200°C
VS-1N1206A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 12A DO203AA
8,784
-
Standard
600V
12A
1.35V @ 12A
Standard Recovery >500ns, > 200mA (Io)
-
1mA @ 600V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-65°C ~ 200°C
VS-APH3006-N3
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 600V 30A TO247AC
8,568
FRED Pt®
Schottky
600V
30A
2.65V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
26ns
30µA @ 600V
-
Through Hole
TO-247-3
TO-247AC
-55°C ~ 175°C
STPSC10H12D
STMicroelectronics
DIODE SCHOTTKY 1.2KV 10A TO220AC
5,922
ECOPACK®2
Silicon Carbide Schottky
1200V
10A
1.5V @ 10A
No Recovery Time > 500mA (Io)
0ns
60µA @ 1200V
725pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
STTH1506DPI
STMicroelectronics
DIODE GEN PURP 600V 15A DOP3I
17,460
-
Standard
600V
15A
3.6V @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
20µA @ 600V
-
Through Hole
DOP3I-2 Insulated (Straight Leads)
DOP3I
150°C (Max)
VS-60EPU02PBF
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 60A TO247AC
22,296
FRED Pt®
Standard
200V
60A
1.08V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
50µA @ 200V
-
Through Hole
TO-247-2
TO-247AC Modified
-55°C ~ 175°C
DSEP60-12A
IXYS
DIODE GEN PURP 1.2KV 60A TO247AD
17,964
HiPerFRED™
Standard
1200V
60A
2.66V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
650µA @ 1200V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
SCS205KGHRC
Rohm Semiconductor
DIODE SCHOTTKY 1200V 5A TO-220-2
15,996
Automotive, AEC-Q101
Silicon Carbide Schottky
1200V
5A (DC)
1.6V @ 5A
No Recovery Time > 500mA (Io)
0ns
100µA @ 1200V
270pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
175°C (Max)
VS-30EPH06-N3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 30A TO247AC
7,561
FRED Pt®
Standard
600V
30A
2.6V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
31ns
50µA @ 600V
-
Through Hole
TO-247-2
TO-247AC Modified
-65°C ~ 175°C
1N1200A
GeneSiC Semiconductor
DIODE GEN PURP 100V 12A DO4
8,556
-
Standard
100V
12A
1.1V @ 12A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 200°C
SCS210AGHRC
Rohm Semiconductor
DIODE SCHOTTKY 650V 10A TO-220-2
14,988
Automotive, AEC-Q101
Silicon Carbide Schottky
650V
10A (DC)
1.55V @ 10A
No Recovery Time > 500mA (Io)
0ns
200µA @ 600V
365pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
175°C (Max)