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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 124/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SBL5100TA
SMC Diode Solutions
DIODE SCHOTTKY 100V DO201AD
14,526
-
Schottky
100V
-
850mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 100V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
ES1F R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A DO214AC
15,816
-
Standard
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
18pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
CD1408-F1400
Bourns
DIODE GEN PURP 400V 1A 1408
200,010
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
5µA @ 400V
15pF @ 4V, 1MHz
Surface Mount
Chip, Concave Terminals
1408
-65°C ~ 175°C
SS1H4LS RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A SOD123HE
248,922
-
Schottky
40V
1A
650mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 40V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
SS1H6LS RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 1A SOD123HE
29,454
-
Schottky
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 60V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
ESH1GM RSG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A MICRO SMA
81,756
-
Standard
400V
1A
1.5V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
1µA @ 400V
3pF @ 4V, 1MHz
Surface Mount
2-SMD, Flat Lead
Micro SMA
-55°C ~ 150°C
SS13MHRSG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A MICRO SMA
27,894
-
Schottky
30V
1A
520mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
5µA @ 30V
50pF @ 4V, 1MHz
Surface Mount
2-SMD, Flat Lead
Micro SMA
-55°C ~ 150°C
BYG21M R3G
Taiwan Semiconductor Corporation
DIODE AVALANCHE 1KV 1.5A DO214AC
28,188
-
Avalanche
1000V
1.5A
1.6V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
1µA @ 1000V
13pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS19 R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 1A DO214AC
65,364
-
Schottky
90V
1A
800mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS2GA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO214AC
14,892
-
Standard
400V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS2JA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO214AC
17,370
-
Standard
600V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SF24G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO204AC
2,000
-
Standard
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
40pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SS29L RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 2A SUB SMA
231,822
-
Schottky
90V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SS210L RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 2A SUB SMA
233,634
-
Schottky
100V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SB560TA
SMC Diode Solutions
DIODE SCHOTTKY 60V DO201AD
14,916
-
Schottky
60V
-
700mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 60V
400pF @ 5V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SS23MHRSG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 2A MICRO SMA
157,944
-
Schottky
30V
2A
600mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 30V
35pF @ 4V, 1MHz
Surface Mount
2-SMD, Flat Lead
Micro SMA
-55°C ~ 150°C
SS1H15LS RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 1A SOD123HE
26,214
-
Schottky
150V
1A
850mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 150V
-
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
ES1G R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO214AC
53,964
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
18pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES1C-E3/61T
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 1A DO214AC
38,922
-
Standard
150V
1A
920mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 150V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
BYG21MHR3G
Taiwan Semiconductor Corporation
DIODE AVALANCHE 1KV 1.5A DO214AC
17,478
-
Avalanche
1000V
1.5A
1.6V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
120ns
1µA @ 1000V
13pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS215L RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 2A SUB SMA
46,668
-
Schottky
150V
2A
850mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
SE10PJ-M3/84A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1A DO220AA
27,216
eSMP®
Standard
600V
1A
1.05V @ 1A
Standard Recovery >500ns, > 200mA (Io)
780ns
5µA @ 600V
-
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
BYG20D R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO214AC
14,604
-
Standard
200V
1.5A
1.4V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
1µA @ 200V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
HS2KA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO214AC
18,120
-
Standard
800V
1.5A
1.7V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
30pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS2KA R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1.5A DO214AC
14,244
-
Standard
800V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS215LWHRVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 2A SOD123W
81,204
-
Schottky
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 150V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
RS2GAHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1.5A DO214AC
47,832
-
Standard
400V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS2JAHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1.5A DO214AC
18,516
-
Standard
600V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
TSSW3U60HRVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 3A SOD123W
24,342
-
Schottky
60V
3A
580mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 60V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
SE15PB-M3/84A
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1.5A DO220AA
56,910
eSMP®
Standard
100V
1.5A
1.05V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
900ns
5µA @ 100V
9.5pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C