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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 1065/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RS1BL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 800MA SUBSMA
8,766
-
Standard
100V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1BLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 800MA SUBSMA
3,526
Automotive, AEC-Q101
Standard
100V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1BLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 800MA SUBSMA
3,168
Automotive, AEC-Q101
Standard
100V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1BLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 800MA SUBSMA
4,914
Automotive, AEC-Q101
Standard
100V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1DL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
7,758
-
Standard
200V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1DL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
8,154
-
Standard
200V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1DLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
2,160
Automotive, AEC-Q101
Standard
200V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1DLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
5,940
Automotive, AEC-Q101
Standard
200V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1DLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 800MA SUBSMA
5,184
Automotive, AEC-Q101
Standard
200V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1GL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
3,132
-
Standard
400V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1GL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
2,430
-
Standard
400V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1GL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
8,064
-
Standard
400V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1GLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
7,992
Automotive, AEC-Q101
Standard
400V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1GLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
6,102
Automotive, AEC-Q101
Standard
400V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1GLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
8,622
Automotive, AEC-Q101
Standard
400V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1JL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 800MA SUBSMA
5,904
-
Standard
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1JL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 800MA SUBSMA
4,392
-
Standard
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1JLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 800MA SUBSMA
3,078
Automotive, AEC-Q101
Standard
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1JLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 800MA SUBSMA
7,488
Automotive, AEC-Q101
Standard
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1JLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 800MA SUBSMA
3,600
Automotive, AEC-Q101
Standard
600V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 600V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1KL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
6,192
-
Standard
800V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1KL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
2,286
-
Standard
800V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1KL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
3,114
-
Standard
800V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1KLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
7,308
Automotive, AEC-Q101
Standard
800V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1KLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
3,042
Automotive, AEC-Q101
Standard
800V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1KLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 800MA SUBSMA
6,084
Automotive, AEC-Q101
Standard
800V
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 800V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1ML MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800MA SUB SMA
4,986
-
Standard
-
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1ML MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800MA SUB SMA
4,662
-
Standard
-
800mA
1.3V @ 800mA
Fast Recovery =< 500ns, > 200mA (Io)
500ns
5µA @ 1000V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFAL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
5,760
-
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RSFAL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 500MA SUB SMA
2,736
-
Standard
50V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C