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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 1062/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SRAS820 MNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 8A TO263AB
5,886
-
Schottky
20V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 20V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 125°C
SRAS820HMNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 8A TO263AB
5,400
Automotive, AEC-Q101
Schottky
20V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 20V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 125°C
SRAS830 MNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 8A TO263AB
3,096
-
Schottky
30V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 30V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 125°C
SRAS830HMNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 8A TO263AB
8,658
Automotive, AEC-Q101
Schottky
30V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 30V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 125°C
SRAS840 MNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 8A TO263AB
6,786
-
Schottky
40V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 125°C
SRAS840HMNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 8A TO263AB
4,248
Automotive, AEC-Q101
Schottky
40V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 125°C
SRAS850 MNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 8A TO263AB
6,102
-
Schottky
50V
8A
700mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 50V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SRAS850HMNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 8A TO263AB
5,814
Automotive, AEC-Q101
Schottky
50V
8A
700mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 50V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SRAS860 MNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 8A TO263AB
3,472
-
Schottky
60V
8A
700mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SRAS860HMNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 8A TO263AB
7,614
Automotive, AEC-Q101
Schottky
60V
8A
700mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SRAS890 MNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 8A TO263AB
5,184
-
Schottky
90V
8A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
SRAS890HMNG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 8A TO263AB
2,196
Automotive, AEC-Q101
Schottky
90V
8A
950mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
UGS5J MNG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 5A TO263AB
5,004
-
Standard
600V
5A
2V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
20µA @ 600V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AB (D²PAK)
-55°C ~ 150°C
ES1AL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
6,570
-
Standard
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
10pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1AL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
6,192
-
Standard
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
10pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1AL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
3,330
-
Standard
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
10pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1ALHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
3,168
Automotive, AEC-Q101
Standard
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1ALHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
7,920
Automotive, AEC-Q101
Standard
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1ALHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
4,212
Automotive, AEC-Q101
Standard
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1BL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
8,208
-
Standard
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
10pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1BL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
4,716
-
Standard
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
10pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1BL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
8,082
-
Standard
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
10pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1BLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
2,124
Automotive, AEC-Q101
Standard
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1BLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
2,016
Automotive, AEC-Q101
Standard
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1BLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
8,802
Automotive, AEC-Q101
Standard
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1CL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A SUB SMA
4,050
-
Standard
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
10pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1CL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A SUB SMA
2,772
-
Standard
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
10pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1CL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A SUB SMA
8,820
-
Standard
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
10pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1CLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A SUB SMA
8,712
Automotive, AEC-Q101
Standard
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1CLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A SUB SMA
4,374
Automotive, AEC-Q101
Standard
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C