Rectifiers - Single
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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 1062/1165
Image |
Part Number |
Manufacturer |
Description |
In Stock |
Quantity |
Series | Diode Type | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Mounting Type | Package / Case | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 8A TO263AB |
5,886 |
|
- | Schottky | 20V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 20V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 8A TO263AB |
5,400 |
|
Automotive, AEC-Q101 | Schottky | 20V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 20V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 8A TO263AB |
3,096 |
|
- | Schottky | 30V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 8A TO263AB |
8,658 |
|
Automotive, AEC-Q101 | Schottky | 30V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 8A TO263AB |
6,786 |
|
- | Schottky | 40V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 8A TO263AB |
4,248 |
|
Automotive, AEC-Q101 | Schottky | 40V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 8A TO263AB |
6,102 |
|
- | Schottky | 50V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 8A TO263AB |
5,814 |
|
Automotive, AEC-Q101 | Schottky | 50V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 50V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 8A TO263AB |
3,472 |
|
- | Schottky | 60V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 8A TO263AB |
7,614 |
|
Automotive, AEC-Q101 | Schottky | 60V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 8A TO263AB |
5,184 |
|
- | Schottky | 90V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 8A TO263AB |
2,196 |
|
Automotive, AEC-Q101 | Schottky | 90V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A TO263AB |
5,004 |
|
- | Standard | 600V | 5A | 2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 20µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A SUB SMA |
6,570 |
|
- | Standard | 50V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 10pF @ 1V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A SUB SMA |
6,192 |
|
- | Standard | 50V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 10pF @ 1V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A SUB SMA |
3,330 |
|
- | Standard | 50V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 10pF @ 1V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A SUB SMA |
3,168 |
|
Automotive, AEC-Q101 | Standard | 50V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A SUB SMA |
7,920 |
|
Automotive, AEC-Q101 | Standard | 50V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A SUB SMA |
4,212 |
|
Automotive, AEC-Q101 | Standard | 50V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A SUB SMA |
8,208 |
|
- | Standard | 100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 10pF @ 1V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A SUB SMA |
4,716 |
|
- | Standard | 100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 10pF @ 1V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A SUB SMA |
8,082 |
|
- | Standard | 100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 10pF @ 1V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A SUB SMA |
2,124 |
|
Automotive, AEC-Q101 | Standard | 100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A SUB SMA |
2,016 |
|
Automotive, AEC-Q101 | Standard | 100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A SUB SMA |
8,802 |
|
Automotive, AEC-Q101 | Standard | 100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 1A SUB SMA |
4,050 |
|
- | Standard | 150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 10pF @ 1V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 1A SUB SMA |
2,772 |
|
- | Standard | 150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 10pF @ 1V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 1A SUB SMA |
8,820 |
|
- | Standard | 150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 10pF @ 1V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 1A SUB SMA |
8,712 |
|
Automotive, AEC-Q101 | Standard | 150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 1A SUB SMA |
4,374 |
|
Automotive, AEC-Q101 | Standard | 150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |