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Rectifiers - Single

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CategorySemiconductors / Diodes & Rectifiers / Rectifiers - Single
Records 34,936
Page 1063/1165
Image
Part Number
Manufacturer
Description
In Stock
Quantity
Series
Diode Type
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
ES1CLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A SUB SMA
6,444
Automotive, AEC-Q101
Standard
150V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1DL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
4,014
-
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
10pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1DL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
5,634
-
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
10pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1DL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
6,714
-
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
10pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1DLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
5,004
Automotive, AEC-Q101
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1DLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
5,148
Automotive, AEC-Q101
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1DLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
4,284
Automotive, AEC-Q101
Standard
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1FL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
5,760
-
Standard
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
8pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1FL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
3,042
-
Standard
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
8pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1FL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
7,614
-
Standard
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
8pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1FLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
8,352
Automotive, AEC-Q101
Standard
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1FLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
7,956
Automotive, AEC-Q101
Standard
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1FLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 1A SUB SMA
2,484
Automotive, AEC-Q101
Standard
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1GL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
3,562
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
8pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1GL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
5,220
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
8pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1GL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
5,148
-
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
8pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1GLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
2,772
Automotive, AEC-Q101
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1GLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
8,442
Automotive, AEC-Q101
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1GLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
8,424
Automotive, AEC-Q101
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1HL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 1A SUB SMA
5,040
-
Standard
500V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
8pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1HL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 1A SUB SMA
7,470
-
Standard
500V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
8pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1HL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 1A SUB SMA
4,716
-
Standard
500V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
8pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1JL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
5,166
-
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
8pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1JL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
2,100
-
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
8pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1JL RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
4,518
-
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
8pF @ 1V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1JLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
8,046
Automotive, AEC-Q101
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1JLHMTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
2,880
Automotive, AEC-Q101
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
ES1JLHRTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
6,102
Automotive, AEC-Q101
Standard
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
8pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1AL MQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
3,762
-
Standard
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
HS1AL MTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
7,020
-
Standard
50V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 50V
20pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C