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TSM22P10CZ C0G

TSM22P10CZ C0G

For Reference Only

Part Number TSM22P10CZ C0G
PNEDA Part # TSM22P10CZ-C0G
Description MOSFET P-CHANNEL
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 2,322
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TSM22P10CZ C0G Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberTSM22P10CZ C0G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TSM22P10CZ C0G, TSM22P10CZ C0G Datasheet (Total Pages: 7, Size: 890.35 KB)
PDFTSM22P10CZ C0G Datasheet Cover
TSM22P10CZ C0G Datasheet Page 2 TSM22P10CZ C0G Datasheet Page 3 TSM22P10CZ C0G Datasheet Page 4 TSM22P10CZ C0G Datasheet Page 5 TSM22P10CZ C0G Datasheet Page 6 TSM22P10CZ C0G Datasheet Page 7

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TSM22P10CZ C0G Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs140mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2250pF @ 30V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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