CSD18537NQ5AT
For Reference Only
| Part Number | CSD18537NQ5AT |
| PNEDA Part # | CSD18537NQ5AT |
| Description | MOSFET N-CH 60V 50A 8SON |
| Manufacturer | Texas Instruments |
| Unit Price | Request a Quote |
| In Stock | 59,484 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Feb 6 - Feb 11 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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CSD18537NQ5AT Resources
| Brand | Texas Instruments |
| ECAD Module |
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| Mfr. Part Number | CSD18537NQ5AT |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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CSD18537NQ5AT Specifications
| Manufacturer | |
| Series | NexFET™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 3.2W (Ta), 75W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSONP (5x6) |
| Package / Case | 8-PowerTDFN |
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Manufacturer Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V FET Feature Temperature Sensing Diode Power Dissipation (Max) 272W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-426 Package / Case TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 15V FET Feature - Power Dissipation (Max) 94W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 23.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 240mOhm @ 11.8A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 145nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V FET Feature - Power Dissipation (Max) 310W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PN Package / Case TO-3P-3, SC-65-3 |
