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IPI12CNE8N G

IPI12CNE8N G

For Reference Only

Part Number IPI12CNE8N G
PNEDA Part # IPI12CNE8N-G
Description MOSFET N-CH 85V 67A TO262-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,978
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPI12CNE8N G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPI12CNE8N G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPI12CNE8N G, IPI12CNE8N G Datasheet (Total Pages: 12, Size: 489.71 KB)
PDFIPI12CNE8N G Datasheet Cover
IPI12CNE8N G Datasheet Page 2 IPI12CNE8N G Datasheet Page 3 IPI12CNE8N G Datasheet Page 4 IPI12CNE8N G Datasheet Page 5 IPI12CNE8N G Datasheet Page 6 IPI12CNE8N G Datasheet Page 7 IPI12CNE8N G Datasheet Page 8 IPI12CNE8N G Datasheet Page 9 IPI12CNE8N G Datasheet Page 10 IPI12CNE8N G Datasheet Page 11

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IPI12CNE8N G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)85V
Current - Continuous Drain (Id) @ 25°C67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs12.6mOhm @ 67A, 10V
Vgs(th) (Max) @ Id4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs64nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4340pF @ 40V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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