SUM110N06-3M9H-E3
For Reference Only
| Part Number | SUM110N06-3M9H-E3 |
| PNEDA Part # | SUM110N06-3M9H-E3 |
| Description | MOSFET N-CH 60V 110A D2PAK |
| Manufacturer | Vishay Siliconix |
| Unit Price | Request a Quote |
| In Stock | 3,330 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
SUM110N06-3M9H-E3 Resources
| Brand | Vishay Siliconix |
| ECAD Module |
|
| Mfr. Part Number | SUM110N06-3M9H-E3 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- SUM110N06-3M9H-E3 Datasheet
- where to find SUM110N06-3M9H-E3
- Vishay Siliconix
- Vishay Siliconix SUM110N06-3M9H-E3
- SUM110N06-3M9H-E3 PDF Datasheet
- SUM110N06-3M9H-E3 Stock
- SUM110N06-3M9H-E3 Pinout
- Datasheet SUM110N06-3M9H-E3
- SUM110N06-3M9H-E3 Supplier
- Vishay Siliconix Distributor
- SUM110N06-3M9H-E3 Price
- SUM110N06-3M9H-E3 Distributor
SUM110N06-3M9H-E3 Specifications
| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 15800pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2Pak) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.5mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 230µA Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4400pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
Manufacturer IXYS Series GigaMOS™, HiPerFET™, TrenchT2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 132A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13mOhm @ 90A, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 364nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 23800pF @ 25V FET Feature - Power Dissipation (Max) 570W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 24-SMPD Package / Case 24-PowerSMD, 21 Leads |
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 5.4A (Ta), 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 34mOhm @ 5.4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 75V FET Feature - Power Dissipation (Max) 2.3W (Ta), 54W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Power33 Package / Case 8-PowerWDFN |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4mOhm @ 90A, 10V Vgs(th) (Max) @ Id 4V @ 90µA Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 30V FET Feature - Power Dissipation (Max) 188W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3 |
Manufacturer Alpha & Omega Semiconductor Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 560mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 4.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 306pF @ 25V FET Feature - Power Dissipation (Max) 78W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-251A Package / Case TO-251-3 Stub Leads, IPak |
